L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz
- Hyeon Bhin Jo
- , Do Young Yun
- , Ji Min Baek
- , Jung Hee Lee
- , Tae Woo Kim
- , Dae Hyun Kim
- , Takuya Tsutsumi
- , Hiroki Sugiyama
- , Hideaki Matsuzaki
- Kyungpook National University
- University of Ulsan
- Nippon Telegraph & Telephone
Research output: Contribution to journal › Article › peer-review
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