L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

  • Hyeon Bhin Jo
  • , Do Young Yun
  • , Ji Min Baek
  • , Jung Hee Lee
  • , Tae Woo Kim
  • , Dae Hyun Kim
  • , Takuya Tsutsumi
  • , Hiroki Sugiyama
  • , Hideaki Matsuzaki

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Fingerprint

Dive into the research topics of 'L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz'. Together they form a unique fingerprint.

Material Science

Chemistry