Large electric polarization and exchange bias in multiferroic BiFeO 3

Joonghoe Dho; Xiaoding Qi; Hyunho Kim; Judith L. MacManus-Driscoll; Mark G. Blamire

doi:10.1002/adma.200502622

Large electric polarization and exchange bias in multiferroic BiFeO ₃

Joonghoe Dho, Xiaoding Qi, Hyunho Kim, Judith L. MacManus-Driscoll, Mark G. Blamire

Department of Physics

Research output: Contribution to journal › Article › peer-review

366 Scopus citations

Abstract

The possibility of obtaining high-quality thin films of BiFeO₃ (BFO) with saturated ferroelectric loops was investigated. A defect model to explain the low leakage obtained in these thin films was presented. The fabrication of a spin-valve structure with BFO as the bottom antiferromagnetic layer was carried out to confirm the antiferromagnetic nature of the BFO surface. It was shown that using appropriate deposition conditions, it is possible to grow well-textured BFO films on SRO-buffered STO(001), which show strong ferroelectric and antiferromagnetic properties. The coercive field of BFO was found to be very large with 2E_c=800 kV cm^-1 at 77 K and 700 kV cm^-1 at 300K. These results indicated the potential for room-temperature applications of BFO, which combine ferroelectric and antiferromagnetic functionality.

Original language	English
Pages (from-to)	1445-1448
Number of pages	4
Journal	Advanced Materials
Volume	18
Issue number	11
DOIs	https://doi.org/10.1002/adma.200502622
State	Published - 6 Jun 2006

Access to Document

10.1002/adma.200502622

Cite this

@article{39a730940d5643e9908eb1c56c4e1bb8,

title = "Large electric polarization and exchange bias in multiferroic BiFeO 3",

abstract = "The possibility of obtaining high-quality thin films of BiFeO3 (BFO) with saturated ferroelectric loops was investigated. A defect model to explain the low leakage obtained in these thin films was presented. The fabrication of a spin-valve structure with BFO as the bottom antiferromagnetic layer was carried out to confirm the antiferromagnetic nature of the BFO surface. It was shown that using appropriate deposition conditions, it is possible to grow well-textured BFO films on SRO-buffered STO(001), which show strong ferroelectric and antiferromagnetic properties. The coercive field of BFO was found to be very large with 2Ec=800 kV cm-1 at 77 K and 700 kV cm-1 at 300K. These results indicated the potential for room-temperature applications of BFO, which combine ferroelectric and antiferromagnetic functionality.",

author = "Joonghoe Dho and Xiaoding Qi and Hyunho Kim and MacManus-Driscoll, {Judith L.} and Blamire, {Mark G.}",

year = "2006",

month = jun,

day = "6",

doi = "10.1002/adma.200502622",

language = "English",

volume = "18",

pages = "1445--1448",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "11",

}

TY - JOUR

T1 - Large electric polarization and exchange bias in multiferroic BiFeO 3

AU - Dho, Joonghoe

AU - Qi, Xiaoding

AU - Kim, Hyunho

AU - MacManus-Driscoll, Judith L.

AU - Blamire, Mark G.

PY - 2006/6/6

Y1 - 2006/6/6

N2 - The possibility of obtaining high-quality thin films of BiFeO3 (BFO) with saturated ferroelectric loops was investigated. A defect model to explain the low leakage obtained in these thin films was presented. The fabrication of a spin-valve structure with BFO as the bottom antiferromagnetic layer was carried out to confirm the antiferromagnetic nature of the BFO surface. It was shown that using appropriate deposition conditions, it is possible to grow well-textured BFO films on SRO-buffered STO(001), which show strong ferroelectric and antiferromagnetic properties. The coercive field of BFO was found to be very large with 2Ec=800 kV cm-1 at 77 K and 700 kV cm-1 at 300K. These results indicated the potential for room-temperature applications of BFO, which combine ferroelectric and antiferromagnetic functionality.

AB - The possibility of obtaining high-quality thin films of BiFeO3 (BFO) with saturated ferroelectric loops was investigated. A defect model to explain the low leakage obtained in these thin films was presented. The fabrication of a spin-valve structure with BFO as the bottom antiferromagnetic layer was carried out to confirm the antiferromagnetic nature of the BFO surface. It was shown that using appropriate deposition conditions, it is possible to grow well-textured BFO films on SRO-buffered STO(001), which show strong ferroelectric and antiferromagnetic properties. The coercive field of BFO was found to be very large with 2Ec=800 kV cm-1 at 77 K and 700 kV cm-1 at 300K. These results indicated the potential for room-temperature applications of BFO, which combine ferroelectric and antiferromagnetic functionality.

UR - http://www.scopus.com/inward/record.url?scp=33745160011&partnerID=8YFLogxK

U2 - 10.1002/adma.200502622

DO - 10.1002/adma.200502622

M3 - Article

AN - SCOPUS:33745160011

SN - 0935-9648

VL - 18

SP - 1445

EP - 1448

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

Large electric polarization and exchange bias in multiferroic BiFeO ₃

Abstract

Access to Document

Other files and links

Fingerprint

Cite this