Laser assisted lift-off process as a organic patterning methodology for organic thin-film transistors fabrication

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using an organic patterning methodology. Laser assisted lift-off (LAW) technique, ablating selectively the Hydrophobie layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly (9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique and is applicable for the larger area display.