Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

Woo Jae Zang; Jung Hee Lee; Jong Hyun Lee; Young Ho Bae; Chang Auck Choi; Sung Ho Hahm

doi:10.1116/1.591344

Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

Woo Jae Zang, Jung Hee Lee, Jong Hyun Lee, Young Ho Bae, Chang Auck Choi, Sung Ho Hahm

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.

Original language	English
Pages (from-to)	1006-1008
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.591344
State	Published - Mar 2000

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title = "Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon",

abstract = "The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.",

author = "Zang, {Woo Jae} and Lee, {Jung Hee} and Lee, {Jong Hyun} and Bae, {Young Ho} and Choi, {Chang Auck} and Hahm, {Sung Ho}",

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AU - Zang, Woo Jae

AU - Lee, Jung Hee

AU - Lee, Jong Hyun

AU - Bae, Young Ho

AU - Choi, Chang Auck

AU - Hahm, Sung Ho

PY - 2000/3

Y1 - 2000/3

N2 - The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.

AB - The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.

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Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

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