Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

Woo Jae Zang; Jung Hee Lee; Jong Hyun Lee; Young Ho Bae; Chang Auck Choi; Sung Ho Hahm

doi:10.1116/1.591344

Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

Woo Jae Zang
, Jung Hee Lee
, Jong Hyun Lee
, Young Ho Bae
, Chang Auck Choi
, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University
Uiduk University
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.

Original language	English
Pages (from-to)	1006-1008
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.591344
State	Published - Mar 2000

Access to Document

10.1116/1.591344

Cite this

@article{b7824cb648874d6a9c69348a6006bb72,

title = "Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon",

abstract = "The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.",

author = "Zang, \{Woo Jae\} and Lee, \{Jung Hee\} and Lee, \{Jong Hyun\} and Bae, \{Young Ho\} and Choi, \{Chang Auck\} and Hahm, \{Sung Ho\}",

year = "2000",

month = mar,

doi = "10.1116/1.591344",

language = "English",

volume = "18",

pages = "1006--1008",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

AU - Zang, Woo Jae

AU - Lee, Jung Hee

AU - Lee, Jong Hyun

AU - Bae, Young Ho

AU - Choi, Chang Auck

AU - Hahm, Sung Ho

PY - 2000/3

Y1 - 2000/3

N2 - The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.

AB - The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.

UR - https://www.scopus.com/pages/publications/0034155450

U2 - 10.1116/1.591344

DO - 10.1116/1.591344

M3 - Article

AN - SCOPUS:0034155450

SN - 1071-1023

VL - 18

SP - 1006

EP - 1008

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this