Abstract
The effectiveness and control parameters of a nanogap formation method using the thin film stress on a SIMOX (separation by implantation of oxygen) wafer were investigated. The fabricated nanogap lateral field effect arrays (FEA) exhibited excellent electrical characteristics. A lateral FEA fabricated by thermal stress-induced gap formation indicated that the device had a 25 V turn-on voltage and a 6 μA/tip emission current at a 35 V operating voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 1006-1008 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 18 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 2000 |