Lateral field emission diodes using SIMOX wafer

Jung Hyeon Park; Hyung Il Lee; Heung Sik Tae; Jeung Soo Huh; Jung Hee Lee

doi:10.1109/16.585560

Lateral field emission diodes using SIMOX wafer

Jung Hyeon Park, Hyung Il Lee, Heung Sik Tae, Jeung Soo Huh, Jung Hee Lee

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Lateral field emission diodes were fabricated by using separation by implantation of oxygen (SIMOX) wafer and their current-voltage characteristics (I-V) were analyzed. Applying conventional photolithography and local oxidation of silicon (LOCOS) process, we fabricated single-crystalline lateral silicon field emitters with very sharp cathode and anode tips and very short cathode to anode spacing ranging from 0.3 to 0.8 μm as well. Two different types of tips, tapered and wedge-shaped emitters, were typically formed according to oxidation time. The turn-on voltages for both types of diodes were as low as 22-25 V and the emission currents were as high as 6 μA/tip at voltages of 35-38 V. From the Fowler-Nordheim (FN) equation, field emitting area (A) and field enhancement factor (β) for both types of diodes were estimated to explain the low turn-on voltages and the high emission currents.

Original language	English
Pages (from-to)	1018-1021
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	6
DOIs	https://doi.org/10.1109/16.585560
State	Published - 1997

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@article{4b056ebbcdda42418bf0e3ba22054a6f,

title = "Lateral field emission diodes using SIMOX wafer",

abstract = "Lateral field emission diodes were fabricated by using separation by implantation of oxygen (SIMOX) wafer and their current-voltage characteristics (I-V) were analyzed. Applying conventional photolithography and local oxidation of silicon (LOCOS) process, we fabricated single-crystalline lateral silicon field emitters with very sharp cathode and anode tips and very short cathode to anode spacing ranging from 0.3 to 0.8 μm as well. Two different types of tips, tapered and wedge-shaped emitters, were typically formed according to oxidation time. The turn-on voltages for both types of diodes were as low as 22-25 V and the emission currents were as high as 6 μA/tip at voltages of 35-38 V. From the Fowler-Nordheim (FN) equation, field emitting area (A) and field enhancement factor (β) for both types of diodes were estimated to explain the low turn-on voltages and the high emission currents.",

author = "Park, {Jung Hyeon} and Lee, {Hyung Il} and Tae, {Heung Sik} and Huh, {Jeung Soo} and Lee, {Jung Hee}",

year = "1997",

doi = "10.1109/16.585560",

language = "English",

volume = "44",

pages = "1018--1021",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Lateral field emission diodes using SIMOX wafer

AU - Park, Jung Hyeon

AU - Lee, Hyung Il

AU - Tae, Heung Sik

AU - Huh, Jeung Soo

AU - Lee, Jung Hee

PY - 1997

Y1 - 1997

N2 - Lateral field emission diodes were fabricated by using separation by implantation of oxygen (SIMOX) wafer and their current-voltage characteristics (I-V) were analyzed. Applying conventional photolithography and local oxidation of silicon (LOCOS) process, we fabricated single-crystalline lateral silicon field emitters with very sharp cathode and anode tips and very short cathode to anode spacing ranging from 0.3 to 0.8 μm as well. Two different types of tips, tapered and wedge-shaped emitters, were typically formed according to oxidation time. The turn-on voltages for both types of diodes were as low as 22-25 V and the emission currents were as high as 6 μA/tip at voltages of 35-38 V. From the Fowler-Nordheim (FN) equation, field emitting area (A) and field enhancement factor (β) for both types of diodes were estimated to explain the low turn-on voltages and the high emission currents.

AB - Lateral field emission diodes were fabricated by using separation by implantation of oxygen (SIMOX) wafer and their current-voltage characteristics (I-V) were analyzed. Applying conventional photolithography and local oxidation of silicon (LOCOS) process, we fabricated single-crystalline lateral silicon field emitters with very sharp cathode and anode tips and very short cathode to anode spacing ranging from 0.3 to 0.8 μm as well. Two different types of tips, tapered and wedge-shaped emitters, were typically formed according to oxidation time. The turn-on voltages for both types of diodes were as low as 22-25 V and the emission currents were as high as 6 μA/tip at voltages of 35-38 V. From the Fowler-Nordheim (FN) equation, field emitting area (A) and field enhancement factor (β) for both types of diodes were estimated to explain the low turn-on voltages and the high emission currents.

UR - http://www.scopus.com/inward/record.url?scp=0031167744&partnerID=8YFLogxK

U2 - 10.1109/16.585560

DO - 10.1109/16.585560

M3 - Article

AN - SCOPUS:0031167744

SN - 0018-9383

VL - 44

SP - 1018

EP - 1021

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Lateral field emission diodes using SIMOX wafer

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