Abstract
Lateral type field emitter arrays were fabricated. The sharpness of both cathode and gate tips and the gap between them were controlled by the LOCOS process. With changing gate bias, the emission current showed three different I-V characteristics.
Original language | English |
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Pages (from-to) | 506-510 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 1 SPEC. |
DOIs | |
State | Published - Jan 2003 |