Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Jae Hoon Lee; Ki Rock Kwon; Hyung Ju Lee; Myoung Bok Lee; Hwa Il Sea; Dae Hyuk Kwon; Jin Sup Kim; Kyu Man Choi; Sung Ho Hahm; Jung Hee Lee

Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Jae Hoon Lee, Ki Rock Kwon, Hyung Ju Lee, Myoung Bok Lee, Hwa Il Sea, Dae Hyuk Kwon, Jin Sup Kim, Kyu Man Choi, Sung Ho Hahm, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at V_AC = 50 V and V_GC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at V_AC = 50 V and V_GC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.

Original language	English
Pages	149-150
Number of pages	2
State	Published - 2001
Event	Proceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States Duration: 12 Aug 2001 → 16 Aug 2001

Conference

Conference	Proceedings of the 14th International Vacuum Microelectronics Conference
Country/Territory	United States
City	Davis, CA
Period	12/08/01 → 16/08/01

Cite this

Lee, J. H., Kwon, K. R., Lee, H. J., Lee, M. B., Sea, H. I., Kwon, D. H., Kim, J. S., Choi, K. M., Hahm, S. H., & Lee, J. H. (2001). Lateral field emitter arrays with higher emission currents and wider operation region by high field activation. 149-150. Paper presented at Proceedings of the 14th International Vacuum Microelectronics Conference, Davis, CA, United States.

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title = "Lateral field emitter arrays with higher emission currents and wider operation region by high field activation",

abstract = "Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at VAC = 50 V and VGC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at VAC = 50 V and VGC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.",

author = "Lee, {Jae Hoon} and Kwon, {Ki Rock} and Lee, {Hyung Ju} and Lee, {Myoung Bok} and Sea, {Hwa Il} and Kwon, {Dae Hyuk} and Kim, {Jin Sup} and Choi, {Kyu Man} and Hahm, {Sung Ho} and Lee, {Jung Hee}",

year = "2001",

language = "English",

pages = "149--150",

note = "Proceedings of the 14th International Vacuum Microelectronics Conference ; Conference date: 12-08-2001 Through 16-08-2001",

}

TY - CONF

T1 - Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

AU - Lee, Jae Hoon

AU - Kwon, Ki Rock

AU - Lee, Hyung Ju

AU - Lee, Myoung Bok

AU - Sea, Hwa Il

AU - Kwon, Dae Hyuk

AU - Kim, Jin Sup

AU - Choi, Kyu Man

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

PY - 2001

Y1 - 2001

N2 - Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at VAC = 50 V and VGC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at VAC = 50 V and VGC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.

AB - Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at VAC = 50 V and VGC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at VAC = 50 V and VGC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.

UR - http://www.scopus.com/inward/record.url?scp=0035784632&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035784632

SP - 149

EP - 150

T2 - Proceedings of the 14th International Vacuum Microelectronics Conference

Y2 - 12 August 2001 through 16 August 2001

ER -

Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Abstract

Conference

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