Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Jae Hoon Lee; Ki Rock Kwon; Hyung Ju Lee; Myoung Bok Lee; Hwa Il Sea; Dae Hyuk Kwon; Jin Sup Kim; Kyu Man Choi; Sung Ho Hahm; Jung Hee Lee

Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Jae Hoon Lee
, Ki Rock Kwon
, Hyung Ju Lee
, Myoung Bok Lee
, Hwa Il Sea
, Dae Hyuk Kwon
, Jin Sup Kim
, Kyu Man Choi
, Sung Ho Hahm
, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University
Korea University of Technology and Education
Kyungil University
Inje University
Kwandong University

Research output: Contribution to conference › Paper › peer-review

Abstract

Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at V_AC = 50 V and V_GC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at V_AC = 50 V and V_GC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.

Original language	English
Pages	149-150
Number of pages	2
State	Published - 2001
Event	Proceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States Duration: 12 Aug 2001 → 16 Aug 2001

Conference

Conference	Proceedings of the 14th International Vacuum Microelectronics Conference
Country/Territory	United States
City	Davis, CA
Period	12/08/01 → 16/08/01

Cite this

Lee, J. H., Kwon, K. R., Lee, H. J., Lee, M. B., Sea, H. I., Kwon, D. H., Kim, J. S., Choi, K. M., Hahm, S. H., & Lee, J. H. (2001). Lateral field emitter arrays with higher emission currents and wider operation region by high field activation. 149-150. Paper presented at Proceedings of the 14th International Vacuum Microelectronics Conference, Davis, CA, United States.

@conference{8d6ea3f7369640f98f7b9e8f7550d1e8,

title = "Lateral field emitter arrays with higher emission currents and wider operation region by high field activation",

abstract = "Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at VAC = 50 V and VGC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at VAC = 50 V and VGC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.",

author = "Lee, \{Jae Hoon\} and Kwon, \{Ki Rock\} and Lee, \{Hyung Ju\} and Lee, \{Myoung Bok\} and Sea, \{Hwa Il\} and Kwon, \{Dae Hyuk\} and Kim, \{Jin Sup\} and Choi, \{Kyu Man\} and Hahm, \{Sung Ho\} and Lee, \{Jung Hee\}",

year = "2001",

language = "English",

pages = "149--150",

note = "Proceedings of the 14th International Vacuum Microelectronics Conference ; Conference date: 12-08-2001 Through 16-08-2001",

}

TY - CONF

T1 - Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

AU - Lee, Jae Hoon

AU - Kwon, Ki Rock

AU - Lee, Hyung Ju

AU - Lee, Myoung Bok

AU - Sea, Hwa Il

AU - Kwon, Dae Hyuk

AU - Kim, Jin Sup

AU - Choi, Kyu Man

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

PY - 2001

Y1 - 2001

N2 - Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at VAC = 50 V and VGC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at VAC = 50 V and VGC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.

AB - Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at VAC = 50 V and VGC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA /50tips at VAC = 50 V and VGC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.

UR - https://www.scopus.com/pages/publications/0035784632

M3 - Paper

AN - SCOPUS:0035784632

SP - 149

EP - 150

T2 - Proceedings of the 14th International Vacuum Microelectronics Conference

Y2 - 12 August 2001 through 16 August 2001

ER -

Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Abstract

Conference

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