Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz

Hyeon Bhin Jo; Ji Min Baek; Do Young Yun; Seung Woo Son; Jung Hee Lee; Tae Woo Kim; Dae Hyun Kim; Takuya Tsutsumi; Hiroki Sugiyama; Hideaki Matsuzaki

doi:10.1109/LED.2018.2871221

Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz

Hyeon Bhin Jo
, Ji Min Baek
, Do Young Yun
, Seung Woo Son
, Jung Hee Lee
, Tae Woo Kim
, Dae Hyun Kim
, Takuya Tsutsumi
, Hiroki Sugiyama
, Hideaki Matsuzaki

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We present our latest results on L g = 87 nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at V DS = 0.9 V, an ON-resistance of 273 Ω - μ m, a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with L SD= 1 μm, and an optimized gate process that yields well-tempered behavior.

Original language	English
Article number	8468210
Pages (from-to)	1640-1643
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/LED.2018.2871221
State	Published - Nov 2018

Keywords

and maximum oscillation frequency (fmax)
current gain cut-off frequency (fT)
InGaAs HEMT

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10.1109/LED.2018.2871221

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title = "Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz",

abstract = "We present our latest results on L g = 87 nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at V DS = 0.9 V, an ON-resistance of 273 Ω - μ m, a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with L SD= 1 μm, and an optimized gate process that yields well-tempered behavior.",

keywords = "and maximum oscillation frequency (fmax), current gain cut-off frequency (fT), InGaAs HEMT",

author = "Jo, \{Hyeon Bhin\} and Baek, \{Ji Min\} and Yun, \{Do Young\} and Son, \{Seung Woo\} and Lee, \{Jung Hee\} and Kim, \{Tae Woo\} and Kim, \{Dae Hyun\} and Takuya Tsutsumi and Hiroki Sugiyama and Hideaki Matsuzaki",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = nov,

doi = "10.1109/LED.2018.2871221",

language = "English",

volume = "39",

pages = "1640--1643",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz

AU - Jo, Hyeon Bhin

AU - Baek, Ji Min

AU - Yun, Do Young

AU - Son, Seung Woo

AU - Lee, Jung Hee

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

AU - Tsutsumi, Takuya

AU - Sugiyama, Hiroki

AU - Matsuzaki, Hideaki

PY - 2018/11

Y1 - 2018/11

N2 - We present our latest results on L g = 87 nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at V DS = 0.9 V, an ON-resistance of 273 Ω - μ m, a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with L SD= 1 μm, and an optimized gate process that yields well-tempered behavior.

AB - We present our latest results on L g = 87 nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at V DS = 0.9 V, an ON-resistance of 273 Ω - μ m, a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with L SD= 1 μm, and an optimized gate process that yields well-tempered behavior.

KW - and maximum oscillation frequency (fmax)

KW - current gain cut-off frequency (fT)

KW - InGaAs HEMT

UR - https://www.scopus.com/pages/publications/85053612382

U2 - 10.1109/LED.2018.2871221

DO - 10.1109/LED.2018.2871221

M3 - Article

AN - SCOPUS:85053612382

SN - 0741-3106

VL - 39

SP - 1640

EP - 1643

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 8468210

ER -

Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz

Abstract

Keywords

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