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Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz
Hyeon Bhin Jo, Ji Min Baek, Do Young Yun, Seung Woo Son, Jung Hee Lee, Tae Woo Kim, Dae Hyun Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki
Research output: Contribution to journal › Article › peer-review