Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors with a gm-max of 3 S/mm and fT of 559 GHz
- Hyeon Bhin Jo
- , Ji Min Baek
- , Do Young Yun
- , Seung Woo Son
- , Jung Hee Lee
- , Tae Woo Kim
- , Dae Hyun Kim
- , Takuya Tsutsumi
- , Hiroki Sugiyama
- , Hideaki Matsuzaki
Research output: Contribution to journal › Article › peer-review
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