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Linear and Symmetric Weight Update of CuOx/HfOx/WOxECRAM Synapse for Neuromophic Systems

  • Heebum Kang
  • , Hyun Wook Kim
  • , Eunryeong Hong
  • , Nayeon Kim
  • , Jiyong Woo
  • Kyungpook National University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We demonstrate linear and symmetric weight update behavior in Cu-ion-driven electro-chemical RAM (ECRAM) for neuromorphic computing systems. We specifically introduce CuOx gate to prevent excessive injection of Cu ions into the channel, thereby showing a highly controllable synaptic response. Our results also reveal that the injected Cu ions are involved in the analog switching.

Original languageEnglish
Title of host publication2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665459792
DOIs
StatePublished - 2022
Event2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, United States
Duration: 11 Jun 202212 Jun 2022

Publication series

Name2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Conference

Conference2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Country/TerritoryUnited States
CityHonolulu
Period11/06/2212/06/22

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