Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

Jiyong Woo; Andrea Padovani; Kibong Moon; Myounghun Kwak; Luca Larcher; Hyunsang Hwang

doi:10.1109/LED.2017.2731859

Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

Jiyong Woo
, Andrea Padovani
, Kibong Moon
, Myounghun Kwak
, Luca Larcher
, Hyunsang Hwang

School of Electronics Engineering

MDLab S.r.l.
MDLSoft Inc.
Pohang University of Science and Technology
University of Modena and Reggio Emilia

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

We perform a comparative study of HfO₂ and Ta₂O₅ resistive switching memory (RRAM) devices for their possible application as electronic synapses. By means of electrical characterization and simulations, we link their electrical behavior (digital or analog switching) to the properties and evolution of the conductive filament (CF). More specifically, we identify that bias-polarity-dependent digital switching in HfO₂ RRAM is primarily related to the creation and rupture of an oxide barrier. Conversely, the modulation of the CF size in Ta₂O₅ RRAM allows bias-polarity-independent analog switching with multiple states. Therefore, when the Ta₂O₅ RRAM is used to implement a synapse in multilayer perceptron neural networks operated by back-propagation algorithms, patterns in handwritten digits can be recognized with high accuracy.

Original language	English
Article number	7990526
Pages (from-to)	1220-1223
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	9
DOIs	https://doi.org/10.1109/LED.2017.2731859
State	Published - Sep 2017

Keywords

filamentary switching
neuromorphic systems
Resistive switching memory (RRAM)
synaptic device

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10.1109/LED.2017.2731859

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@article{481b47e5f736438bbcc57fa5aad6330c,

title = "Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications",

abstract = "We perform a comparative study of HfO2 and Ta2O5 resistive switching memory (RRAM) devices for their possible application as electronic synapses. By means of electrical characterization and simulations, we link their electrical behavior (digital or analog switching) to the properties and evolution of the conductive filament (CF). More specifically, we identify that bias-polarity-dependent digital switching in HfO2 RRAM is primarily related to the creation and rupture of an oxide barrier. Conversely, the modulation of the CF size in Ta2O5 RRAM allows bias-polarity-independent analog switching with multiple states. Therefore, when the Ta2O5 RRAM is used to implement a synapse in multilayer perceptron neural networks operated by back-propagation algorithms, patterns in handwritten digits can be recognized with high accuracy.",

keywords = "filamentary switching, neuromorphic systems, Resistive switching memory (RRAM), synaptic device",

author = "Jiyong Woo and Andrea Padovani and Kibong Moon and Myounghun Kwak and Luca Larcher and Hyunsang Hwang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

month = sep,

doi = "10.1109/LED.2017.2731859",

language = "English",

volume = "38",

pages = "1220--1223",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

AU - Woo, Jiyong

AU - Padovani, Andrea

AU - Moon, Kibong

AU - Kwak, Myounghun

AU - Larcher, Luca

AU - Hwang, Hyunsang

PY - 2017/9

Y1 - 2017/9

N2 - We perform a comparative study of HfO2 and Ta2O5 resistive switching memory (RRAM) devices for their possible application as electronic synapses. By means of electrical characterization and simulations, we link their electrical behavior (digital or analog switching) to the properties and evolution of the conductive filament (CF). More specifically, we identify that bias-polarity-dependent digital switching in HfO2 RRAM is primarily related to the creation and rupture of an oxide barrier. Conversely, the modulation of the CF size in Ta2O5 RRAM allows bias-polarity-independent analog switching with multiple states. Therefore, when the Ta2O5 RRAM is used to implement a synapse in multilayer perceptron neural networks operated by back-propagation algorithms, patterns in handwritten digits can be recognized with high accuracy.

AB - We perform a comparative study of HfO2 and Ta2O5 resistive switching memory (RRAM) devices for their possible application as electronic synapses. By means of electrical characterization and simulations, we link their electrical behavior (digital or analog switching) to the properties and evolution of the conductive filament (CF). More specifically, we identify that bias-polarity-dependent digital switching in HfO2 RRAM is primarily related to the creation and rupture of an oxide barrier. Conversely, the modulation of the CF size in Ta2O5 RRAM allows bias-polarity-independent analog switching with multiple states. Therefore, when the Ta2O5 RRAM is used to implement a synapse in multilayer perceptron neural networks operated by back-propagation algorithms, patterns in handwritten digits can be recognized with high accuracy.

KW - filamentary switching

KW - neuromorphic systems

KW - Resistive switching memory (RRAM)

KW - synaptic device

UR - https://www.scopus.com/pages/publications/85028915150

U2 - 10.1109/LED.2017.2731859

DO - 10.1109/LED.2017.2731859

M3 - Article

AN - SCOPUS:85028915150

SN - 0741-3106

VL - 38

SP - 1220

EP - 1223

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 7990526

ER -

Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

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Keywords

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