Low-frequency acoustic phonon temperature distribution in electrically biased graphene

Insun Jo; I. Kai Hsu; Yong J. Lee; Mir Mohammad Sadeghi; Seyoung Kim; Stephen Cronin; Emanuel Tutuc; Sanjay K. Banerjee; Zhen Yao; Li Shi

doi:10.1021/nl102858c

Low-frequency acoustic phonon temperature distribution in electrically biased graphene

Insun Jo, I. Kai Hsu, Yong J. Lee, Mir Mohammad Sadeghi, Seyoung Kim, Stephen Cronin, Emanuel Tutuc, Sanjay K. Banerjee, Zhen Yao, Li Shi

Department of Smart Mobility Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

On the basis of scanning thermal microscopy (SThM) measurements in contact and lift modes, the low-frequency acoustic phonon temperature in electrically biased, 6.7 - 9.7 μm long graphene channels is found to be in equilibrium with the anharmonic scattering temperature determined from the Raman 2D peak position. With ∼100 nm scale spatial resolution, the SThM reveals the shifting of local hot spots corresponding to low-carrier concentration regions with the bias and gate voltages in these much shorter samples than those exhibiting similar behaviors in the infrared emission maps.

Original language	English
Pages (from-to)	85-90
Number of pages	6
Journal	Nano Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1021/nl102858c
State	Published - 12 Jan 2011

Keywords

Acoustic phonons
Electrical heating
Graphene
Raman spectroscopy
Scanning thermal microscopy

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10.1021/nl102858c

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title = "Low-frequency acoustic phonon temperature distribution in electrically biased graphene",

abstract = "On the basis of scanning thermal microscopy (SThM) measurements in contact and lift modes, the low-frequency acoustic phonon temperature in electrically biased, 6.7 - 9.7 μm long graphene channels is found to be in equilibrium with the anharmonic scattering temperature determined from the Raman 2D peak position. With ∼100 nm scale spatial resolution, the SThM reveals the shifting of local hot spots corresponding to low-carrier concentration regions with the bias and gate voltages in these much shorter samples than those exhibiting similar behaviors in the infrared emission maps.",

keywords = "Acoustic phonons, Electrical heating, Graphene, Raman spectroscopy, Scanning thermal microscopy",

author = "Insun Jo and Hsu, {I. Kai} and Lee, {Yong J.} and Sadeghi, {Mir Mohammad} and Seyoung Kim and Stephen Cronin and Emanuel Tutuc and Banerjee, {Sanjay K.} and Zhen Yao and Li Shi",

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doi = "10.1021/nl102858c",

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T1 - Low-frequency acoustic phonon temperature distribution in electrically biased graphene

AU - Jo, Insun

AU - Hsu, I. Kai

AU - Lee, Yong J.

AU - Sadeghi, Mir Mohammad

AU - Kim, Seyoung

AU - Cronin, Stephen

AU - Tutuc, Emanuel

AU - Banerjee, Sanjay K.

AU - Yao, Zhen

AU - Shi, Li

PY - 2011/1/12

Y1 - 2011/1/12

N2 - On the basis of scanning thermal microscopy (SThM) measurements in contact and lift modes, the low-frequency acoustic phonon temperature in electrically biased, 6.7 - 9.7 μm long graphene channels is found to be in equilibrium with the anharmonic scattering temperature determined from the Raman 2D peak position. With ∼100 nm scale spatial resolution, the SThM reveals the shifting of local hot spots corresponding to low-carrier concentration regions with the bias and gate voltages in these much shorter samples than those exhibiting similar behaviors in the infrared emission maps.

AB - On the basis of scanning thermal microscopy (SThM) measurements in contact and lift modes, the low-frequency acoustic phonon temperature in electrically biased, 6.7 - 9.7 μm long graphene channels is found to be in equilibrium with the anharmonic scattering temperature determined from the Raman 2D peak position. With ∼100 nm scale spatial resolution, the SThM reveals the shifting of local hot spots corresponding to low-carrier concentration regions with the bias and gate voltages in these much shorter samples than those exhibiting similar behaviors in the infrared emission maps.

KW - Acoustic phonons

KW - Electrical heating

KW - Graphene

KW - Raman spectroscopy

KW - Scanning thermal microscopy

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U2 - 10.1021/nl102858c

DO - 10.1021/nl102858c

M3 - Article

AN - SCOPUS:79951527277

SN - 1530-6984

VL - 11

SP - 85

EP - 90

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

Low-frequency acoustic phonon temperature distribution in electrically biased graphene

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Keywords

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