Low-frequency transconductance dispersion characteristics of 0.13μm in0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface

Tae Woo Kim; Dae Hyun Kim; In Ho Kang; Jeong Hoon Kim; Kwang Seok Seo; Jong In Song

Low-frequency transconductance dispersion characteristics of 0.13μm in_0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface

Tae Woo Kim, Dae Hyun Kim, In Ho Kang, Jeong Hoon Kim, Kwang Seok Seo, Jong In Song

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Effects of side recess on kink effect and transconductance (g_m) frequency dispersion characteristics of 0.13μm InGaAs p-HEMTs having InAlAs and InP surface were investigated. The p-HEMT having a 300nm recessed InP surface showed negligible kink effect and g_m dispersion due to the reduction in surface-state induced trap density in the InP etch-stop and impact-ionization induced hole current (I_g,hole).

Original language	English
Pages (from-to)	370-373
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2004
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004

Cite this

@article{28fd8926151b42f390cb5cad309ea4f5,

title = "Low-frequency transconductance dispersion characteristics of 0.13μm in0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface",

abstract = "Effects of side recess on kink effect and transconductance (gm) frequency dispersion characteristics of 0.13μm InGaAs p-HEMTs having InAlAs and InP surface were investigated. The p-HEMT having a 300nm recessed InP surface showed negligible kink effect and gm dispersion due to the reduction in surface-state induced trap density in the InP etch-stop and impact-ionization induced hole current (Ig,hole).",

author = "Kim, \{Tae Woo\} and Kim, \{Dae Hyun\} and Kang, \{In Ho\} and Kim, \{Jeong Hoon\} and Seo, \{Kwang Seok\} and Song, \{Jong In\}",

year = "2004",

language = "English",

pages = "370--373",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

Low-frequency transconductance dispersion characteristics of 0.13μm in_0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface. / Kim, Tae Woo; Kim, Dae Hyun; Kang, In Ho et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2004, p. 370-373.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Low-frequency transconductance dispersion characteristics of 0.13μm in0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

AU - Kang, In Ho

AU - Kim, Jeong Hoon

AU - Seo, Kwang Seok

AU - Song, Jong In

PY - 2004

Y1 - 2004

N2 - Effects of side recess on kink effect and transconductance (gm) frequency dispersion characteristics of 0.13μm InGaAs p-HEMTs having InAlAs and InP surface were investigated. The p-HEMT having a 300nm recessed InP surface showed negligible kink effect and gm dispersion due to the reduction in surface-state induced trap density in the InP etch-stop and impact-ionization induced hole current (Ig,hole).

AB - Effects of side recess on kink effect and transconductance (gm) frequency dispersion characteristics of 0.13μm InGaAs p-HEMTs having InAlAs and InP surface were investigated. The p-HEMT having a 300nm recessed InP surface showed negligible kink effect and gm dispersion due to the reduction in surface-state induced trap density in the InP etch-stop and impact-ionization induced hole current (Ig,hole).

UR - https://www.scopus.com/pages/publications/23744477535

M3 - Conference article

AN - SCOPUS:23744477535

SN - 1092-8669

SP - 370

EP - 373

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Low-frequency transconductance dispersion characteristics of 0.13μm in_0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface

Abstract

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