@inproceedings{c9d535175f2b47d48aafbd702c5fcaa1,
title = "Low-temperature characteristics of In0.7Ga0.3As PHEMTs",
abstract = "In this paper, we report on temperature dependent DC characteristics of In0.7Ga0.3As Pseudomorphic-HEMTs (PHEMTs) on InP substrate. First, we have fabricated the In0.7Ga0.3As PHEMTs with various values of Lg, ranging from 10 μm to 2.5 μm. The fabricated device with Lg = 2.5 μm exhibits excellent subthreshold-swing (SS) of 64 mV/decade at room temperature. Note that this is close to 60 mV/decade, which is a theoretical limit at room temperature in a FET configuration. Next, we have measured current-voltage characteristics at various values of temperatures, from 300 K to 80 K. Finally, we have investigated the temperature-dependent DC characteristics of the In0.7Ga0.3As PHEMTs, in terms of output, subthreshold, and transconductance characteristics.",
keywords = "III-V, InGaAs, Low-Temperature, PHEMT",
author = "Son, \{Seung Woo\} and Park, \{Jung Ho\} and Baek, \{Ji Min\} and Kim, \{Jin Su\} and Kim, \{Do Kywn\} and Kim, \{Dae Hyun\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016 ; Conference date: 02-08-2016 Through 04-08-2016",
year = "2016",
month = sep,
day = "27",
doi = "10.1109/LEC.2016.7578922",
language = "English",
series = "Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "12--14",
booktitle = "Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016",
address = "United States",
}