Low temperature OMVPE growth of ZnSe with tertiary-butyl allyl selenide and dimethylzinc-triethylamine

Jeung Soo Huh; Jae Chang Kim; Jeong Ok Lim; K. F. Jensen

doi:10.1007/BF03026132

Low temperature OMVPE growth of ZnSe with tertiary-butyl allyl selenide and dimethylzinc-triethylamine

Jeung Soo Huh, Jae Chang Kim, Jeong Ok Lim, K. F. Jensen

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Abstract

The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has been investigated for tertiary-butyl allyl selenide (tBASe), combined with dimethylzinc-triethylamine (DMZn : NEt₃). Single crystalline ZnSe films were grown on GaAs at temperature as low as 350°C with a reasonable growth rate ( ∼1 μm/h). Secondary ion mass spectrometry (SIMS) spectra show a negligible carbon incorporation in ZnSe films from tBASe even at high VI/II ratio, in contrast the carbon concentration of 10²¹ cm^-3 in ZnSe films grown from diallyl selenide (DASe)and methylallylselenide (MASe). Good surface morphology, crystalline and interface quality of ZnSe on (001) GaAs are confirmed by scanning electron microscopy, double crystal diffractometry (DCD) and Rutherford backscattering spectrometry (RBS). Photoluminescence at 10K shows sharp near-band-edge excitonic spectra.

Original language	English
Pages (from-to)	103-107
Number of pages	5
Journal	Metals and Materials International
Volume	3
Issue number	2
DOIs	https://doi.org/10.1007/BF03026132
State	Published - 1997

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title = "Low temperature OMVPE growth of ZnSe with tertiary-butyl allyl selenide and dimethylzinc-triethylamine",

abstract = "The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has been investigated for tertiary-butyl allyl selenide (tBASe), combined with dimethylzinc-triethylamine (DMZn : NEt3). Single crystalline ZnSe films were grown on GaAs at temperature as low as 350°C with a reasonable growth rate ( ∼1 μm/h). Secondary ion mass spectrometry (SIMS) spectra show a negligible carbon incorporation in ZnSe films from tBASe even at high VI/II ratio, in contrast the carbon concentration of 1021 cm-3 in ZnSe films grown from diallyl selenide (DASe)and methylallylselenide (MASe). Good surface morphology, crystalline and interface quality of ZnSe on (001) GaAs are confirmed by scanning electron microscopy, double crystal diffractometry (DCD) and Rutherford backscattering spectrometry (RBS). Photoluminescence at 10K shows sharp near-band-edge excitonic spectra.",

author = "Huh, {Jeung Soo} and Kim, {Jae Chang} and Lim, {Jeong Ok} and Jensen, {K. F.}",

year = "1997",

doi = "10.1007/BF03026132",

language = "English",

volume = "3",

pages = "103--107",

journal = "Metals and Materials International",

issn = "1225-9438",

publisher = "Korean Institute of Metals and Materials",

number = "2",

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TY - JOUR

T1 - Low temperature OMVPE growth of ZnSe with tertiary-butyl allyl selenide and dimethylzinc-triethylamine

AU - Huh, Jeung Soo

AU - Kim, Jae Chang

AU - Lim, Jeong Ok

AU - Jensen, K. F.

PY - 1997

Y1 - 1997

N2 - The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has been investigated for tertiary-butyl allyl selenide (tBASe), combined with dimethylzinc-triethylamine (DMZn : NEt3). Single crystalline ZnSe films were grown on GaAs at temperature as low as 350°C with a reasonable growth rate ( ∼1 μm/h). Secondary ion mass spectrometry (SIMS) spectra show a negligible carbon incorporation in ZnSe films from tBASe even at high VI/II ratio, in contrast the carbon concentration of 1021 cm-3 in ZnSe films grown from diallyl selenide (DASe)and methylallylselenide (MASe). Good surface morphology, crystalline and interface quality of ZnSe on (001) GaAs are confirmed by scanning electron microscopy, double crystal diffractometry (DCD) and Rutherford backscattering spectrometry (RBS). Photoluminescence at 10K shows sharp near-band-edge excitonic spectra.

AB - The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has been investigated for tertiary-butyl allyl selenide (tBASe), combined with dimethylzinc-triethylamine (DMZn : NEt3). Single crystalline ZnSe films were grown on GaAs at temperature as low as 350°C with a reasonable growth rate ( ∼1 μm/h). Secondary ion mass spectrometry (SIMS) spectra show a negligible carbon incorporation in ZnSe films from tBASe even at high VI/II ratio, in contrast the carbon concentration of 1021 cm-3 in ZnSe films grown from diallyl selenide (DASe)and methylallylselenide (MASe). Good surface morphology, crystalline and interface quality of ZnSe on (001) GaAs are confirmed by scanning electron microscopy, double crystal diffractometry (DCD) and Rutherford backscattering spectrometry (RBS). Photoluminescence at 10K shows sharp near-band-edge excitonic spectra.

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U2 - 10.1007/BF03026132

DO - 10.1007/BF03026132

M3 - Article

AN - SCOPUS:0031461158

SN - 1225-9438

VL - 3

SP - 103

EP - 107

JO - Metals and Materials International

JF - Metals and Materials International

IS - 2

ER -

Low temperature OMVPE growth of ZnSe with tertiary-butyl allyl selenide and dimethylzinc-triethylamine

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