Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

Min Suk Oh; D. K. Hwang; Kimoon Lee; Seongil Im; S. Yi

doi:10.1063/1.2732819

Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

Min Suk Oh, D. K. Hwang, Kimoon Lee, Seongil Im, S. Yi

Yonsei University

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

Original language	English
Article number	173511
Journal	Applied Physics Letters
Volume	90
Issue number	17
DOIs	https://doi.org/10.1063/1.2732819
State	Published - 2007

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title = "Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric",

abstract = "The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.",

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AU - Hwang, D. K.

AU - Lee, Kimoon

AU - Im, Seongil

AU - Yi, S.

PY - 2007

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N2 - The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

AB - The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

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ER -

Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

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