Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

Wantae Lim; E. A. Douglas; D. P. Norton; S. J. Pearton; F. Ren; Young Woo Heo; S. Y. Son; J. H. Yuh

doi:10.1063/1.3309753

Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young Woo Heo, S. Y. Son, J. H. Yuh

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc- oxide (InGaZnO₄) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μ_sat) of 1.2 cm² V^-1 s ^-1, threshold voltage (V_TH) of 1.9 V, subthreshold gate-voltage swing (S) of 0.65 V decade^-1, and drain current on-to-off ratio (I_ON / I_OFF) of ∼ 10⁴. These values were only slightly inferior to those obtained from devices on glass substrates (μ_sat ∼2.1 cm² V^-1 s ^-1, VTH ∼0 V, S∼0.74 V decade^-1, and I _ON / I_OFF = 10⁵ - 10⁶). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.

Original language	English
Article number	053510
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3309753
State	Published - 2010

Access to Document

10.1063/1.3309753

Cite this

@article{a006c1abd072433db390ef3454a93400,

title = "Low-voltage indium gallium zinc oxide thin film transistors on paper substrates",

abstract = "We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc- oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2 V-1 s -1, threshold voltage (VTH) of 1.9 V, subthreshold gate-voltage swing (S) of 0.65 V decade-1, and drain current on-to-off ratio (ION / IOFF) of ∼ 104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat ∼2.1 cm2 V-1 s -1, VTH ∼0 V, S∼0.74 V decade-1, and I ON / IOFF = 105 - 106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.",

author = "Wantae Lim and Douglas, {E. A.} and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and Heo, {Young Woo} and Son, {S. Y.} and Yuh, {J. H.}",

year = "2010",

doi = "10.1063/1.3309753",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

AU - Lim, Wantae

AU - Douglas, E. A.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Heo, Young Woo

AU - Son, S. Y.

AU - Yuh, J. H.

PY - 2010

Y1 - 2010

N2 - We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc- oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2 V-1 s -1, threshold voltage (VTH) of 1.9 V, subthreshold gate-voltage swing (S) of 0.65 V decade-1, and drain current on-to-off ratio (ION / IOFF) of ∼ 104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat ∼2.1 cm2 V-1 s -1, VTH ∼0 V, S∼0.74 V decade-1, and I ON / IOFF = 105 - 106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.

AB - We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc- oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2 V-1 s -1, threshold voltage (VTH) of 1.9 V, subthreshold gate-voltage swing (S) of 0.65 V decade-1, and drain current on-to-off ratio (ION / IOFF) of ∼ 104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat ∼2.1 cm2 V-1 s -1, VTH ∼0 V, S∼0.74 V decade-1, and I ON / IOFF = 105 - 106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.

UR - http://www.scopus.com/inward/record.url?scp=76449086938&partnerID=8YFLogxK

U2 - 10.1063/1.3309753

DO - 10.1063/1.3309753

M3 - Article

AN - SCOPUS:76449086938

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053510

ER -

Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this