L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts

In this paper, we report the fabrication and characterization of L_g = 50 nm Gate-All-Around (GAA) In_0.53Ga_0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In_0.53Ga_0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al₂O₃/HfO₂, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with L_g = 50 nm, W_NS = 200 nm and t_NS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (g_{m_max} = 1.86 mS/μm and I_ON = 0.4 mA/μm) at V_DS = 0.5 V. To the best of our knowledge, this is the first demonstration of In_xGa_1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.