Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O 3 insulator

D. H. Kim; J. A. Del Alamo; D. A. Antoniadis; J. Li; J. M. Kuo; P. Pinsukanjana; Y. C. Kao; P. Chen; A. Papavasiliou; C. King; E. Regan; M. Urteaga; B. Brar; T. W. Kim

doi:10.1063/1.4769230

L_g = 60 nm recessed In_0.7Ga_0.3As metal-oxide-semiconductor field-effect transistors with Al₂O ₃ insulator

D. H. Kim
, J. A. Del Alamo
, D. A. Antoniadis
, J. Li
, J. M. Kuo
, P. Pinsukanjana
, Y. C. Kao
, P. Chen
, A. Papavasiliou
, C. King
, E. Regan
, M. Urteaga
, B. Brar
, T. W. Kim

Massachusetts Institute of Technology
Intelligent Epitaxy Technology
Teledyne Technologies
SEMATECH

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

In this Letter, we report on sub-100 nm recessed In_0.7Ga _0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al₂O₃ layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An L_g 60 nm MOSFET exhibits on-resistance (R_ON) 220 Ω-μm, subthreshold-swing (S) 110 mV/decade, and drain-induced-barrier-lowering (DIBL) 200 mV/V at V_DS 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (g_m-max) 2000 μs/μm and current-gain cutoff frequency (f_T) 370 GHz at V_DS 0.5 V, in any III-V MOSFET technology.

Original language	English
Article number	223507
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4769230
State	Published - 26 Nov 2012

Access to Document

10.1063/1.4769230

Cite this

Kim, D. H., Del Alamo, J. A., Antoniadis, D. A., Li, J., Kuo, J. M., Pinsukanjana, P., Kao, Y. C., Chen, P., Papavasiliou, A., King, C., Regan, E., Urteaga, M., Brar, B., & Kim, T. W. (2012). L_g = 60 nm recessed In_0.7Ga_0.3As metal-oxide-semiconductor field-effect transistors with Al₂O ₃ insulator. Applied Physics Letters, 101(22), Article 223507. https://doi.org/10.1063/1.4769230

@article{471dd94f23764849b2b8739ba3023f0c,

title = "Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O 3 insulator",

abstract = "In this Letter, we report on sub-100 nm recessed In0.7Ga 0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al2O3 layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An Lg 60 nm MOSFET exhibits on-resistance (RON) 220 Ω-μm, subthreshold-swing (S) 110 mV/decade, and drain-induced-barrier-lowering (DIBL) 200 mV/V at VDS 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (gm-max) 2000 μs/μm and current-gain cutoff frequency (fT) 370 GHz at VDS 0.5 V, in any III-V MOSFET technology.",

author = "Kim, \{D. H.\} and \{Del Alamo\}, \{J. A.\} and Antoniadis, \{D. A.\} and J. Li and Kuo, \{J. M.\} and P. Pinsukanjana and Kao, \{Y. C.\} and P. Chen and A. Papavasiliou and C. King and E. Regan and M. Urteaga and B. Brar and Kim, \{T. W.\}",

year = "2012",

month = nov,

day = "26",

doi = "10.1063/1.4769230",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O 3 insulator

AU - Kim, D. H.

AU - Del Alamo, J. A.

AU - Antoniadis, D. A.

AU - Li, J.

AU - Kuo, J. M.

AU - Pinsukanjana, P.

AU - Kao, Y. C.

AU - Chen, P.

AU - Papavasiliou, A.

AU - King, C.

AU - Regan, E.

AU - Urteaga, M.

AU - Brar, B.

AU - Kim, T. W.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - In this Letter, we report on sub-100 nm recessed In0.7Ga 0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al2O3 layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An Lg 60 nm MOSFET exhibits on-resistance (RON) 220 Ω-μm, subthreshold-swing (S) 110 mV/decade, and drain-induced-barrier-lowering (DIBL) 200 mV/V at VDS 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (gm-max) 2000 μs/μm and current-gain cutoff frequency (fT) 370 GHz at VDS 0.5 V, in any III-V MOSFET technology.

AB - In this Letter, we report on sub-100 nm recessed In0.7Ga 0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al2O3 layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An Lg 60 nm MOSFET exhibits on-resistance (RON) 220 Ω-μm, subthreshold-swing (S) 110 mV/decade, and drain-induced-barrier-lowering (DIBL) 200 mV/V at VDS 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (gm-max) 2000 μs/μm and current-gain cutoff frequency (fT) 370 GHz at VDS 0.5 V, in any III-V MOSFET technology.

UR - https://www.scopus.com/pages/publications/84870555996

U2 - 10.1063/1.4769230

DO - 10.1063/1.4769230

M3 - Article

AN - SCOPUS:84870555996

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223507

ER -

L_g = 60 nm recessed In_0.7Ga_0.3As metal-oxide-semiconductor field-effect transistors with Al₂O ₃ insulator

Abstract

Access to Document

Other files and links

Fingerprint

Cite this