Lg=100nm InAs PHEMTs on InP substrate with record high frequency response

D. H. Kim; P. Chen; T. W. Kim; M. Urteaga; B. Brar

doi:10.1049/el.2012.2699

L_g=100nm InAs PHEMTs on InP substrate with record high frequency response

D. H. Kim, P. Chen, T. W. Kim, M. Urteaga, B. Brar

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A report is presented on 100nm and 200nm InAs PHEMTs on an InP substrate with a record f_T performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100nm InAs PHEMT exhibits excellent performance, such as g_m,max=2 S/mm, f_T=421GHz and f_max=620GHz at V_DS=0.7 V. The device also shows a well-balanced f_T and f_max in excess of 400GHz, even at V_DS=0.5 V. In addition, the device gains about 70% improvement in f_T as L_g shrinks down from 200 to 100nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz f_T from III-V HEMTs in the future.

Original language	English
Pages (from-to)	1352-1353
Number of pages	2
Journal	Electronics Letters
Volume	48
Issue number	21
DOIs	https://doi.org/10.1049/el.2012.2699
State	Published - 11 Oct 2012

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title = "Lg=100nm InAs PHEMTs on InP substrate with record high frequency response",

abstract = "A report is presented on 100nm and 200nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421GHz and fmax=620GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400GHz, even at VDS=0.5 V. In addition, the device gains about 70% improvement in fT as Lg shrinks down from 200 to 100nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future.",

author = "Kim, {D. H.} and P. Chen and Kim, {T. W.} and M. Urteaga and B. Brar",

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AU - Kim, D. H.

AU - Chen, P.

AU - Kim, T. W.

AU - Urteaga, M.

AU - Brar, B.

PY - 2012/10/11

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N2 - A report is presented on 100nm and 200nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421GHz and fmax=620GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400GHz, even at VDS=0.5 V. In addition, the device gains about 70% improvement in fT as Lg shrinks down from 200 to 100nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future.

AB - A report is presented on 100nm and 200nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421GHz and fmax=620GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400GHz, even at VDS=0.5 V. In addition, the device gains about 70% improvement in fT as Lg shrinks down from 200 to 100nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future.

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L_g=100nm InAs PHEMTs on InP substrate with record high frequency response

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