Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature

Dong Geon Jung; Daewoong Jung; Seong Ho Kong

doi:10.5369/JSST.2019.28.2.127

Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature

Dong Geon Jung, Daewoong Jung, Seong Ho Kong

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (<400 °С) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.

Original language	English
Pages (from-to)	127-132
Number of pages	6
Journal	Journal of Sensor Science and Technology
Volume	28
Issue number	2
DOIs	https://doi.org/10.5369/JSST.2019.28.2.127
State	Published - Mar 2019

Keywords

Low temperature process
SWNT(Single walled nanotube)
TSV(Through silicon via)

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@article{aff85303d6b34a17bfde6d9f37bc2e9e,

title = "Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature",

abstract = "In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (<400 °С) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.",

keywords = "Low temperature process, SWNT(Single walled nanotube), TSV(Through silicon via)",

author = "Jung, {Dong Geon} and Daewoong Jung and Kong, {Seong Ho}",

year = "2019",

month = mar,

doi = "10.5369/JSST.2019.28.2.127",

language = "English",

volume = "28",

pages = "127--132",

journal = "Journal of Sensor Science and Technology",

issn = "1225-5475",

publisher = "Korean Sensors Society",

number = "2",

}

TY - JOUR

T1 - Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature

AU - Jung, Dong Geon

AU - Jung, Daewoong

AU - Kong, Seong Ho

PY - 2019/3

Y1 - 2019/3

N2 - In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (<400 °С) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.

AB - In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (<400 °С) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.

KW - Low temperature process

KW - SWNT(Single walled nanotube)

KW - TSV(Through silicon via)

UR - http://www.scopus.com/inward/record.url?scp=85174615645&partnerID=8YFLogxK

U2 - 10.5369/JSST.2019.28.2.127

DO - 10.5369/JSST.2019.28.2.127

M3 - Article

AN - SCOPUS:85174615645

SN - 1225-5475

VL - 28

SP - 127

EP - 132

JO - Journal of Sensor Science and Technology

JF - Journal of Sensor Science and Technology

IS - 2

ER -

Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature

Abstract

Keywords

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