Material engineering to enhance reliability in 3D NAND flash memory

Ki Han Kim; Namju Kim; Yeong Kwon Kim; Hee Seung Kim; Han Byeol Oh; Chae Eun Kim; Hyeun Woo Shin; Myeong Gi Kim; Won Jun Choi; Byung Chul Jang

doi:10.1016/j.device.2024.100682

Material engineering to enhance reliability in 3D NAND flash memory

Ki Han Kim
, Namju Kim
, Yeong Kwon Kim
, Hee Seung Kim
, Han Byeol Oh
, Chae Eun Kim
, Hyeun Woo Shin
, Myeong Gi Kim
, Won Jun Choi
, Byung Chul Jang

Kyungpook National University

Research output: Contribution to journal › Review article › peer-review

5 Scopus citations

Abstract

Recent advancements in 3D NAND flash memory are driven by the need for higher storage density and faster data access speed, particularly to support emerging applications, such as artificial intelligence and memory-centric computing. As 3D NAND flash technology evolves, various technical problems related to process complexity have surfaced, such as those related to reliability. In this review, we focus on the individual storage unit known as a “cell device” and the reliability issues that arise with increasing memory density in 3D NAND flash. Attempts to address these challenges are outlined, focusing on the ONOP layers (tunneling/trap/blocking/channel) materials that significantly impact reliability. However, the materials currently utilized for ONOP layers are faced with physical property limitations, necessitating the introduction of novel materials and processes for each ONOP layer.

Original language	English
Article number	100682
Journal	Device
Volume	3
Issue number	2
DOIs	https://doi.org/10.1016/j.device.2024.100682
State	Published - 21 Feb 2025

Keywords

3D NAND flash
cell device
charge-trap flash
DTI-2: Explore
reliability

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10.1016/j.device.2024.100682

Cite this

@article{1c0f817da2fe454e967afcd44f2ca643,

title = "Material engineering to enhance reliability in 3D NAND flash memory",

abstract = "Recent advancements in 3D NAND flash memory are driven by the need for higher storage density and faster data access speed, particularly to support emerging applications, such as artificial intelligence and memory-centric computing. As 3D NAND flash technology evolves, various technical problems related to process complexity have surfaced, such as those related to reliability. In this review, we focus on the individual storage unit known as a “cell device” and the reliability issues that arise with increasing memory density in 3D NAND flash. Attempts to address these challenges are outlined, focusing on the ONOP layers (tunneling/trap/blocking/channel) materials that significantly impact reliability. However, the materials currently utilized for ONOP layers are faced with physical property limitations, necessitating the introduction of novel materials and processes for each ONOP layer.",

keywords = "3D NAND flash, cell device, charge-trap flash, DTI-2: Explore, reliability",

author = "Kim, \{Ki Han\} and Namju Kim and Kim, \{Yeong Kwon\} and Kim, \{Hee Seung\} and Oh, \{Han Byeol\} and Kim, \{Chae Eun\} and Shin, \{Hyeun Woo\} and Kim, \{Myeong Gi\} and Choi, \{Won Jun\} and Jang, \{Byung Chul\}",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2025",

month = feb,

day = "21",

doi = "10.1016/j.device.2024.100682",

language = "English",

volume = "3",

journal = "Device",

issn = "2666-9986",

publisher = "Cell Press",

number = "2",

}

TY - JOUR

T1 - Material engineering to enhance reliability in 3D NAND flash memory

AU - Kim, Ki Han

AU - Kim, Namju

AU - Kim, Yeong Kwon

AU - Kim, Hee Seung

AU - Oh, Han Byeol

AU - Kim, Chae Eun

AU - Shin, Hyeun Woo

AU - Kim, Myeong Gi

AU - Choi, Won Jun

AU - Jang, Byung Chul

PY - 2025/2/21

Y1 - 2025/2/21

N2 - Recent advancements in 3D NAND flash memory are driven by the need for higher storage density and faster data access speed, particularly to support emerging applications, such as artificial intelligence and memory-centric computing. As 3D NAND flash technology evolves, various technical problems related to process complexity have surfaced, such as those related to reliability. In this review, we focus on the individual storage unit known as a “cell device” and the reliability issues that arise with increasing memory density in 3D NAND flash. Attempts to address these challenges are outlined, focusing on the ONOP layers (tunneling/trap/blocking/channel) materials that significantly impact reliability. However, the materials currently utilized for ONOP layers are faced with physical property limitations, necessitating the introduction of novel materials and processes for each ONOP layer.

AB - Recent advancements in 3D NAND flash memory are driven by the need for higher storage density and faster data access speed, particularly to support emerging applications, such as artificial intelligence and memory-centric computing. As 3D NAND flash technology evolves, various technical problems related to process complexity have surfaced, such as those related to reliability. In this review, we focus on the individual storage unit known as a “cell device” and the reliability issues that arise with increasing memory density in 3D NAND flash. Attempts to address these challenges are outlined, focusing on the ONOP layers (tunneling/trap/blocking/channel) materials that significantly impact reliability. However, the materials currently utilized for ONOP layers are faced with physical property limitations, necessitating the introduction of novel materials and processes for each ONOP layer.

KW - 3D NAND flash

KW - cell device

KW - charge-trap flash

KW - DTI-2: Explore

KW - reliability

UR - https://www.scopus.com/pages/publications/85217958501

U2 - 10.1016/j.device.2024.100682

DO - 10.1016/j.device.2024.100682

M3 - Review article

AN - SCOPUS:85217958501

SN - 2666-9986

VL - 3

JO - Device

JF - Device

IS - 2

M1 - 100682

ER -

Material engineering to enhance reliability in 3D NAND flash memory

Abstract

Keywords

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