Measurement of radiation damage on a back-illuminated silicon PIN photodiode caused by a 35 MeV proton beam

Jae Beom Bae; Hyo Jung Hyun; Dong Ha Kah; Hyun Ok Kim; Hwanbae Park; Myung Hwan Jung; Se Jin Ra

doi:10.3938/jkps.59.692

Measurement of radiation damage on a back-illuminated silicon PIN photodiode caused by a 35 MeV proton beam

Jae Beom Bae, Hyo Jung Hyun, Dong Ha Kah, Hyun Ok Kim, Hwanbae Park, Myung Hwan Jung, Se Jin Ra

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We develop a backside illuminated photo-sensor that is fabricated on a <100>-oriented, high resistivity n-type 400 μm thick silicon wafer. The PIN photodiode is designed and manufactured as a radiation detector for alpha particles and low energy gamma-rays. The silicon photo-sensor is susceptible to radiation damage. Therefore, it is important to investigate the effects of radiation damage to the fabricated PIN photodiode. We measure the radiation damage to a PIN photodiode by a 35 MeV proton beam at the Korea Institute of Radiological and Medical Sciences (KIRAMS). We present the effects of proton radiation on the electrical properties of the PIN photodiode.

Original language	English
Pages (from-to)	692-694
Number of pages	3
Journal	Journal of the Korean Physical Society
Volume	59
Issue number	22
DOIs	https://doi.org/10.3938/jkps.59.692
State	Published - 12 Aug 2011

Keywords

KIRAMS
PIN photodiode
Photo-sensor
Proton beam
Radiation damage

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@article{b02baf3a9868414db0951f5d293454f1,

title = "Measurement of radiation damage on a back-illuminated silicon PIN photodiode caused by a 35 MeV proton beam",

abstract = "We develop a backside illuminated photo-sensor that is fabricated on a <100>-oriented, high resistivity n-type 400 μm thick silicon wafer. The PIN photodiode is designed and manufactured as a radiation detector for alpha particles and low energy gamma-rays. The silicon photo-sensor is susceptible to radiation damage. Therefore, it is important to investigate the effects of radiation damage to the fabricated PIN photodiode. We measure the radiation damage to a PIN photodiode by a 35 MeV proton beam at the Korea Institute of Radiological and Medical Sciences (KIRAMS). We present the effects of proton radiation on the electrical properties of the PIN photodiode.",

keywords = "KIRAMS, PIN photodiode, Photo-sensor, Proton beam, Radiation damage",

author = "Bae, {Jae Beom} and Hyun, {Hyo Jung} and Kah, {Dong Ha} and Kim, {Hyun Ok} and Hwanbae Park and Jung, {Myung Hwan} and Ra, {Se Jin}",

year = "2011",

month = aug,

day = "12",

doi = "10.3938/jkps.59.692",

language = "English",

volume = "59",

pages = "692--694",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "22",

}

TY - JOUR

T1 - Measurement of radiation damage on a back-illuminated silicon PIN photodiode caused by a 35 MeV proton beam

AU - Bae, Jae Beom

AU - Hyun, Hyo Jung

AU - Kah, Dong Ha

AU - Kim, Hyun Ok

AU - Park, Hwanbae

AU - Jung, Myung Hwan

AU - Ra, Se Jin

PY - 2011/8/12

Y1 - 2011/8/12

N2 - We develop a backside illuminated photo-sensor that is fabricated on a <100>-oriented, high resistivity n-type 400 μm thick silicon wafer. The PIN photodiode is designed and manufactured as a radiation detector for alpha particles and low energy gamma-rays. The silicon photo-sensor is susceptible to radiation damage. Therefore, it is important to investigate the effects of radiation damage to the fabricated PIN photodiode. We measure the radiation damage to a PIN photodiode by a 35 MeV proton beam at the Korea Institute of Radiological and Medical Sciences (KIRAMS). We present the effects of proton radiation on the electrical properties of the PIN photodiode.

AB - We develop a backside illuminated photo-sensor that is fabricated on a <100>-oriented, high resistivity n-type 400 μm thick silicon wafer. The PIN photodiode is designed and manufactured as a radiation detector for alpha particles and low energy gamma-rays. The silicon photo-sensor is susceptible to radiation damage. Therefore, it is important to investigate the effects of radiation damage to the fabricated PIN photodiode. We measure the radiation damage to a PIN photodiode by a 35 MeV proton beam at the Korea Institute of Radiological and Medical Sciences (KIRAMS). We present the effects of proton radiation on the electrical properties of the PIN photodiode.

KW - KIRAMS

KW - PIN photodiode

KW - Photo-sensor

KW - Proton beam

KW - Radiation damage

UR - http://www.scopus.com/inward/record.url?scp=79961225185&partnerID=8YFLogxK

U2 - 10.3938/jkps.59.692

DO - 10.3938/jkps.59.692

M3 - Article

AN - SCOPUS:79961225185

SN - 0374-4884

VL - 59

SP - 692

EP - 694

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 22

ER -

Measurement of radiation damage on a back-illuminated silicon PIN photodiode caused by a 35 MeV proton beam

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