Measurement of sputtering yield of the RF-plasma treated MgO films

W. H. Jeong; K. W. Jeong; Y. C. Lim; H. J. Oh; C. W. Park; E. H. Choi; Y. H. Seo; Y. K. Kim; S. O. Kang

Measurement of sputtering yield of the RF-plasma treated MgO films

W. H. Jeong, K. W. Jeong, Y. C. Lim, H. J. Oh, C. W. Park, E. H. Choi, Y. H. Seo, Y. K. Kim, S. O. Kang

School of Mechanical Engineering

Kwangwoon University

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

We have measured sputtering yield of radio frequency(RF) Ar-plasma treated and O₂-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 kV acceleration voltage has been applied. The sputtering yields of the untreated, the Ar-plasma treated and O₂-plasma treated samples have been 0.32 atoms/ion, 0.21 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma treatment on MgO thin film has been characterized by XPS analysis.

Original language	English
Pages	1145-1148
Number of pages	4
State	Published - 2006
Event	13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 6 Dec 2006 → 6 Dec 2006

Conference

Conference	13th International Display Workshops, IDW '06
Country/Territory	Japan
City	Otsu
Period	6/12/06 → 6/12/06

Cite this

@conference{44020a1837e14235bd731380e311f54f,

title = "Measurement of sputtering yield of the RF-plasma treated MgO films",

abstract = "We have measured sputtering yield of radio frequency(RF) Ar-plasma treated and O2-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 kV acceleration voltage has been applied. The sputtering yields of the untreated, the Ar-plasma treated and O2-plasma treated samples have been 0.32 atoms/ion, 0.21 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma treatment on MgO thin film has been characterized by XPS analysis.",

author = "Jeong, {W. H.} and Jeong, {K. W.} and Lim, {Y. C.} and Oh, {H. J.} and Park, {C. W.} and Choi, {E. H.} and Seo, {Y. H.} and Kim, {Y. K.} and Kang, {S. O.}",

year = "2006",

language = "English",

pages = "1145--1148",

note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

}

TY - CONF

T1 - Measurement of sputtering yield of the RF-plasma treated MgO films

AU - Jeong, W. H.

AU - Jeong, K. W.

AU - Lim, Y. C.

AU - Oh, H. J.

AU - Park, C. W.

AU - Choi, E. H.

AU - Seo, Y. H.

AU - Kim, Y. K.

AU - Kang, S. O.

PY - 2006

Y1 - 2006

N2 - We have measured sputtering yield of radio frequency(RF) Ar-plasma treated and O2-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 kV acceleration voltage has been applied. The sputtering yields of the untreated, the Ar-plasma treated and O2-plasma treated samples have been 0.32 atoms/ion, 0.21 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma treatment on MgO thin film has been characterized by XPS analysis.

AB - We have measured sputtering yield of radio frequency(RF) Ar-plasma treated and O2-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 kV acceleration voltage has been applied. The sputtering yields of the untreated, the Ar-plasma treated and O2-plasma treated samples have been 0.32 atoms/ion, 0.21 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma treatment on MgO thin film has been characterized by XPS analysis.

UR - http://www.scopus.com/inward/record.url?scp=57649176634&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:57649176634

SP - 1145

EP - 1148

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Measurement of sputtering yield of the RF-plasma treated MgO films

Abstract

Conference

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