Measurements of a silicon sensor's specifications

Various types of silicon sensors have been used to measure the energies and the tracks of passing particles in high-energy physics, nuclear physics, and astrophysics experiments. Depending on the experimental purposes and goals, silicon substrates with different resistivities, doping types, doping concentrations and thicknesses are chosen for the manufacture of the sensors. Because the properties of the substrate and the fabrication process determine the sensor's performance, verifing whether the fabricated sensors satisfy the specifications required to achieve the physics goals targeted in the experiments is important. In this paper, we present measurements of the bulk capacitance as functions of the frequency and the reverse bias voltage, along with the full depletion voltages, doping concentrations and resistivity values of fabricated sensors. We then compare them to the specifications for the silicon substrate and the run sheet for the fabrications.