Metal-oxide semiconductor field-effect transistors using single ZnO nanowire

Young Woo Heo; B. S. Kang; L. C. Tien; Y. Kwon; J. R. La Roche; B. P. Gila; F. Ren; S. J. Pearton; D. P. Norton

Metal-oxide semiconductor field-effect transistors using single ZnO nanowire

Young Woo Heo, B. S. Kang, L. C. Tien, Y. Kwon, J. R. La Roche, B. P. Gila, F. Ren, S. J. Pearton, D. P. Norton

University of Florida

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Single ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C,the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼3V and a maximum transconductance of order 0.3 mS/mm .Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm ²/V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.

Original language	English
Article number	B8.1
Pages (from-to)	327-332
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	829
State	Published - 2005
Event	Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications - Boston, MA, United States Duration: 29 Nov 2004 → 3 Dec 2004

Cite this

@article{4019f39bf4804cc7be5503e7dda70aa9,

title = "Metal-oxide semiconductor field-effect transistors using single ZnO nanowire",

abstract = "Single ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C,the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼3V and a maximum transconductance of order 0.3 mS/mm .Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm 2/V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.",

author = "Heo, \{Young Woo\} and Kang, \{B. S.\} and Tien, \{L. C.\} and Y. Kwon and \{La Roche\}, \{J. R.\} and Gila, \{B. P.\} and F. Ren and Pearton, \{S. J.\} and Norton, \{D. P.\}",

year = "2005",

language = "English",

volume = "829",

pages = "327--332",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications ; Conference date: 29-11-2004 Through 03-12-2004",

}

TY - JOUR

T1 - Metal-oxide semiconductor field-effect transistors using single ZnO nanowire

AU - Heo, Young Woo

AU - Kang, B. S.

AU - Tien, L. C.

AU - Kwon, Y.

AU - La Roche, J. R.

AU - Gila, B. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Norton, D. P.

PY - 2005

Y1 - 2005

N2 - Single ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C,the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼3V and a maximum transconductance of order 0.3 mS/mm .Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm 2/V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.

AB - Single ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C,the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼3V and a maximum transconductance of order 0.3 mS/mm .Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm 2/V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.

UR - https://www.scopus.com/pages/publications/20344395860

M3 - Conference article

AN - SCOPUS:20344395860

SN - 0272-9172

VL - 829

SP - 327

EP - 332

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - B8.1

T2 - Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications

Y2 - 29 November 2004 through 3 December 2004

ER -

Metal-oxide semiconductor field-effect transistors using single ZnO nanowire

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