TY - JOUR
T1 - Micropatterned vertical alignment liquid crystal mode with dual threshold voltages for improved off-axis gamma distortion
AU - Shin, Young Chul
AU - Park, Min Kyu
AU - Kim, Byeonggon
AU - Bae, Jeong Min
AU - Kim, Hak Rin
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/1
Y1 - 2018/1
N2 - We proposed an eight-domain vertical alignment (VA) liquid crystal (LC) mode, operated by dual pixel domains of fishbone-structured electrodes for dual threshold (F-DT) voltages in the VA mode, which can improve off-axis gamma distortions without additional electronic circuits and fabrication procedures compared with the conventional multidomain VA modes. In the proposed F-DT VA mode, different threshold voltage levels can be obtained for themain- and subpixel regions by utilizing different fieldinduced LC reorientations determined by the pixel electrode structures, whose properties are especially enhanced in low-voltage regimes. When the relative area ratio (RA = Amain/Asub) between the main- and subpixel domains was RA = 5, these dual threshold properties of the F-DTVA mode improved the off-axis gamma distortion index (GDI) value up to 34.04% at the oblique viewing condition of θ = 60°, compared to the conventional patterned VA (PVA) modes, while maintaining the maximum transmittance level. The proposed pixel electrode design scheme could be applied to further improve the GDI value simply by controlling RA, where the GDI of the F-DT VA mode was improved by 39.17% and 17.05% at RA = 2, compared to the conventional PVA and micropatterned VA modes, respectively.
AB - We proposed an eight-domain vertical alignment (VA) liquid crystal (LC) mode, operated by dual pixel domains of fishbone-structured electrodes for dual threshold (F-DT) voltages in the VA mode, which can improve off-axis gamma distortions without additional electronic circuits and fabrication procedures compared with the conventional multidomain VA modes. In the proposed F-DT VA mode, different threshold voltage levels can be obtained for themain- and subpixel regions by utilizing different fieldinduced LC reorientations determined by the pixel electrode structures, whose properties are especially enhanced in low-voltage regimes. When the relative area ratio (RA = Amain/Asub) between the main- and subpixel domains was RA = 5, these dual threshold properties of the F-DTVA mode improved the off-axis gamma distortion index (GDI) value up to 34.04% at the oblique viewing condition of θ = 60°, compared to the conventional patterned VA (PVA) modes, while maintaining the maximum transmittance level. The proposed pixel electrode design scheme could be applied to further improve the GDI value simply by controlling RA, where the GDI of the F-DT VA mode was improved by 39.17% and 17.05% at RA = 2, compared to the conventional PVA and micropatterned VA modes, respectively.
KW - Gamma curve
KW - Gamma distortion index (GDI)
KW - Liquid crystals (LCs)
KW - Vertical alignment (VA) LC
KW - Viewing angle
UR - http://www.scopus.com/inward/record.url?scp=85035099263&partnerID=8YFLogxK
U2 - 10.1109/TED.2017.2769806
DO - 10.1109/TED.2017.2769806
M3 - Article
AN - SCOPUS:85035099263
SN - 0018-9383
VL - 65
SP - 150
EP - 157
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
ER -