Microstructural and electrical characteristics of preferential growth direction controlled CuCrO₂ thin films

5 at.% Mg doped CuCrO₂ films with different preferential growth orientations were grown on different substrates, (0001) Al₂O ₃, (001) YSZ, (001) SrTiO₃ and quartz, by pulsed laser deposition. Film growth was performed at 500, 650 and 700 °C under an oxygen pressure of 10 mTorr. The c-axis preferred orientation of the CuCrO₂ films was observed on the (000l) Al₂O₃ and (100) YSZ substrate. On the other hand, the CuCrO₂ films on (100) SrTiO ₃ substrates were oriented perpendicular to (01-15). The growth direction of the CuCrO₂ films on a quartz substrate was set randomly. The films on the (001) SrTiO₃ and quartz substrates showed few changes in their microstructures and electrical properties despite the increase in growth temperatures. On the other hand, the electrical properties of (0001) CuCrO₂ epitaxial films on (0001) Al₂O₃ and (001) YSZ changed significantly with increasing growth temperature, which led to a change in their microstructure. The correlation between the microstructure and electrical properties suggest that control of the preferential growth direction and their related microstructures is important for reducing the undesired grain boundary that affects the electrical properties of the CuCrO₂ films.