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Microstructures and electrical properties of (Pb, lа)Тio3 thin films grown on the pt electrodes with a percolating network structure

  • Don Hee Lee
  • , Jeong Soo Lee
  • , Sung Moon Cho
  • , Hyo Jin Nam
  • , Jue Haeng Lee
  • , Jun Rim Choi
  • , Kwang Young Kim
  • , Sung OKUYAMA Kim
  • , Masanori Okuyama

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We have investigated the microstructures and electrical properties of Pb0.95, Lа0.05ТiO3 (PLT) thin films deposited on the (100)-oriented Pt/(100)MgO substrates by rf magnetron sputtering and have fabricated a thin film infrared sensor. The (100)-oriented Pt film is formed via a coalescence of Pt islands and the Pt layer goes through a transition from nonconducting islands to a conductive percolating network as the Pt deposition time increases. The highly c-axis oriented PLT thin film has been successfully grown on the Pt bottom electrode with a network structure. The PLT thin film on the interconnected percolating Pt network exhibits a well saturated ferroelectric hysteresis loop with the remanent polarization of 1.6 μC/cm2 and the coercive field of 70 kV/cm. The responsivity and detectivity of the thin film infrared sensor are 700 V/W and 6 x 108 cmformula presented at 10 Hz, respectively, without any poling treatment.

Original languageEnglish
Pages (from-to)2453-2458
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume34
Issue number5R
DOIs
StatePublished - May 1995

Keywords

  • C-axis orientation
  • Infrared sensor
  • Percolating Pt network
  • PLT thin film

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