Abstract
Comparison has been made between the microstructures and electrical properties of Pb0-95 La0.05TiO3 (PLT) thin films deposited on bare (100)MgO and on Pt/(100)MgO, Nearly perfect epitaxial PLT was grown on (lOO)MgO. (100)-oriented Pt film was obtained via coalescence of Pt islands formed on MgO. Highly c-axis oriented PLT thin film was successfully grown on the Pt bottom electrode with an electrically conductive network structure. High detectivity of 3.5 x 108 and 2.6 x 108 cm/Hz/W was obtained at 30 Hz without any poling treatments from the PLT/MgO-and PLT/Pt/MgO-based infrared detectors, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 125-132 |
| Number of pages | 8 |
| Journal | Integrated Ferroelectrics |
| Volume | 9 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Jun 1995 |
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