Minority carrier transport in p-type Zn0.9 Mg0.1 O doped with phosphorus

O. Lopatiuk; W. Burdett; L. Chernyak; K. P. Ip; Y. W. Heo; D. P. Norton; S. J. Pearton; B. Hertog; P. P. Chow; A. Osinsky

doi:10.1063/1.1844037

Minority carrier transport in p-type Zn0.9 Mg0.1 O doped with phosphorus

O. Lopatiuk, W. Burdett, L. Chernyak, K. P. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, B. Hertog, P. P. Chow, A. Osinsky

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Abstract

Minority carrier diffusion length and lifetime in p- Zn0.9 Mg0.1 O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of ~2.12 μm and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256±20 meV found for the effect of electron injection in Zn0.9 Mg0.1 O.

Original language	English
Article number	012105
Pages (from-to)	012105-1-012105-3
Journal	Applied Physics Letters
Volume	86
Issue number	1
DOIs	https://doi.org/10.1063/1.1844037
State	Published - Jan 2005

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abstract = "Minority carrier diffusion length and lifetime in p- Zn0.9 Mg0.1 O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of ~2.12 μm and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256±20 meV found for the effect of electron injection in Zn0.9 Mg0.1 O.",

author = "O. Lopatiuk and W. Burdett and L. Chernyak and Ip, {K. P.} and Heo, {Y. W.} and Norton, {D. P.} and Pearton, {S. J.} and B. Hertog and Chow, {P. P.} and A. Osinsky",

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T1 - Minority carrier transport in p-type Zn0.9 Mg0.1 O doped with phosphorus

AU - Lopatiuk, O.

AU - Burdett, W.

AU - Chernyak, L.

AU - Ip, K. P.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Hertog, B.

AU - Chow, P. P.

AU - Osinsky, A.

PY - 2005/1

Y1 - 2005/1

N2 - Minority carrier diffusion length and lifetime in p- Zn0.9 Mg0.1 O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of ~2.12 μm and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256±20 meV found for the effect of electron injection in Zn0.9 Mg0.1 O.

AB - Minority carrier diffusion length and lifetime in p- Zn0.9 Mg0.1 O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of ~2.12 μm and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256±20 meV found for the effect of electron injection in Zn0.9 Mg0.1 O.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Minority carrier transport in p-type Zn0.9 Mg0.1 O doped with phosphorus

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