Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Journal of the Electron Devices Society
State	Published - 2013

Cite this

@article{9b9b1445d2534ca09220f33c18cc6424,

title = "Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications",

author = "\{In Man\}, Kang",

year = "2013",

language = "English",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}