Mobility boost up of hybrid TFT with solvent-free cross-linked polyurethane-ionic liquid gate dielectric

Nam Kwang Cho; Jinil Cho; Gayeong Yoo; Jae Eun Huh; Suyeon Lee; Sunghee Kim; Soo Young Yoon; Jeeyoung Yoo; Youn Sang Kim

doi:10.7567/1882-0786/ab45e2

Mobility boost up of hybrid TFT with solvent-free cross-linked polyurethane-ionic liquid gate dielectric

Nam Kwang Cho, Jinil Cho, Gayeong Yoo, Jae Eun Huh, Suyeon Lee, Sunghee Kim, Soo Young Yoon, Jeeyoung Yoo, Youn Sang Kim

School of Energy Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We proposed solvent-free cross-linked ion gel polymer as a high-κ gate dielectric composed with polyurethane terminated with acrylate functional group and ionic liquids (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) through ultra violet curing (UV-cured IL-PU). Free-standing UV-cured IL-PUs were applied as gate insulator by conformally contacting on the amorphous indium gallium zinc oxide side-gate structure thin film transistor with a simple ex situ method. The device shows a dramatic improvement of electrical performances even under low operating voltage conditions; on/off ratio ∼10⁴, field effect mobility at linear region 47.79 ± 17.65 cm² V^-1 s^-1, sub-threshold swing 145.54 ± 16.65 mV decade^-1 at V _DS = 0.1 V and V _GS sweep from -3 to 2 V.

Original language	English
Article number	101004
Journal	Applied Physics Express
Volume	12
Issue number	10
DOIs	https://doi.org/10.7567/1882-0786/ab45e2
State	Published - 1 Oct 2019

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title = "Mobility boost up of hybrid TFT with solvent-free cross-linked polyurethane-ionic liquid gate dielectric",

abstract = "We proposed solvent-free cross-linked ion gel polymer as a high-κ gate dielectric composed with polyurethane terminated with acrylate functional group and ionic liquids (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) through ultra violet curing (UV-cured IL-PU). Free-standing UV-cured IL-PUs were applied as gate insulator by conformally contacting on the amorphous indium gallium zinc oxide side-gate structure thin film transistor with a simple ex situ method. The device shows a dramatic improvement of electrical performances even under low operating voltage conditions; on/off ratio ∼104, field effect mobility at linear region 47.79 ± 17.65 cm2 V-1 s-1, sub-threshold swing 145.54 ± 16.65 mV decade-1 at V DS = 0.1 V and V GS sweep from -3 to 2 V.",

author = "Cho, {Nam Kwang} and Jinil Cho and Gayeong Yoo and Huh, {Jae Eun} and Suyeon Lee and Sunghee Kim and Yoon, {Soo Young} and Jeeyoung Yoo and Kim, {Youn Sang}",

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T1 - Mobility boost up of hybrid TFT with solvent-free cross-linked polyurethane-ionic liquid gate dielectric

AU - Cho, Nam Kwang

AU - Cho, Jinil

AU - Yoo, Gayeong

AU - Huh, Jae Eun

AU - Lee, Suyeon

AU - Kim, Sunghee

AU - Yoon, Soo Young

AU - Yoo, Jeeyoung

AU - Kim, Youn Sang

PY - 2019/10/1

Y1 - 2019/10/1

N2 - We proposed solvent-free cross-linked ion gel polymer as a high-κ gate dielectric composed with polyurethane terminated with acrylate functional group and ionic liquids (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) through ultra violet curing (UV-cured IL-PU). Free-standing UV-cured IL-PUs were applied as gate insulator by conformally contacting on the amorphous indium gallium zinc oxide side-gate structure thin film transistor with a simple ex situ method. The device shows a dramatic improvement of electrical performances even under low operating voltage conditions; on/off ratio ∼104, field effect mobility at linear region 47.79 ± 17.65 cm2 V-1 s-1, sub-threshold swing 145.54 ± 16.65 mV decade-1 at V DS = 0.1 V and V GS sweep from -3 to 2 V.

AB - We proposed solvent-free cross-linked ion gel polymer as a high-κ gate dielectric composed with polyurethane terminated with acrylate functional group and ionic liquids (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) through ultra violet curing (UV-cured IL-PU). Free-standing UV-cured IL-PUs were applied as gate insulator by conformally contacting on the amorphous indium gallium zinc oxide side-gate structure thin film transistor with a simple ex situ method. The device shows a dramatic improvement of electrical performances even under low operating voltage conditions; on/off ratio ∼104, field effect mobility at linear region 47.79 ± 17.65 cm2 V-1 s-1, sub-threshold swing 145.54 ± 16.65 mV decade-1 at V DS = 0.1 V and V GS sweep from -3 to 2 V.

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VL - 12

JO - Applied Physics Express

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M1 - 101004

ER -

Mobility boost up of hybrid TFT with solvent-free cross-linked polyurethane-ionic liquid gate dielectric

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