Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer

Kihyun Yoon; Gawon Kim; Woojin Lee; Taigon Song; Junho Lee; Hyungdong Lee; Kunwoo Park; Joungho Kim

doi:10.1109/EPTC.2009.5416458

Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer

Kihyun Yoon, Gawon Kim, Woojin Lee, Taigon Song, Junho Lee, Hyungdong Lee, Kunwoo Park, Joungho Kim

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

68 Scopus citations

Abstract

In this paper, we present a lumped element model for coupled interconnect structures of TSV, metal interconnects, and Redistribution Layer (RDL) in Through-Silicon-Via (TSV)-based 3D IC with silicon interposer. We also analyzed the electrical characteristic of coupling between 3D silicon interposer interconnects. The equivalent lumped model is derived and verified with the S-parameter measurement results. The lumped model for TSV, metal, and RDL combined interconnects is verified with the EM solver simulation results. The S-parameter from the proposed model shows good agreement with the result from the measurement and simulation up to 20GHz. We also proposed shielding structures to suppress coupling between silicon interposer interconnects.

Original language	English
Title of host publication	EPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference
Pages	702-706
Number of pages	5
DOIs	https://doi.org/10.1109/EPTC.2009.5416458
State	Published - 2009
Event	2009 11th Electronic Packaging Technology Conference, EPTC 2009 - Singapore, Singapore Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	Proceedings of the Electronic Packaging Technology Conference, EPTC

Conference

Conference	2009 11th Electronic Packaging Technology Conference, EPTC 2009
Country/Territory	Singapore
City	Singapore
Period	9/12/09 → 11/12/09

Keywords

Coupled interconnect
RDL
S-parameter
Shielding structure
Silicon interposer
Through-silicon-via (TSV)

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10.1109/EPTC.2009.5416458

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Yoon, K., Kim, G., Lee, W., Song, T., Lee, J., Lee, H., Park, K., & Kim, J. (2009). Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer. In EPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference (pp. 702-706). Article 5416458 (Proceedings of the Electronic Packaging Technology Conference, EPTC). https://doi.org/10.1109/EPTC.2009.5416458

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abstract = "In this paper, we present a lumped element model for coupled interconnect structures of TSV, metal interconnects, and Redistribution Layer (RDL) in Through-Silicon-Via (TSV)-based 3D IC with silicon interposer. We also analyzed the electrical characteristic of coupling between 3D silicon interposer interconnects. The equivalent lumped model is derived and verified with the S-parameter measurement results. The lumped model for TSV, metal, and RDL combined interconnects is verified with the EM solver simulation results. The S-parameter from the proposed model shows good agreement with the result from the measurement and simulation up to 20GHz. We also proposed shielding structures to suppress coupling between silicon interposer interconnects.",

keywords = "Coupled interconnect, RDL, S-parameter, Shielding structure, Silicon interposer, Through-silicon-via (TSV)",

author = "Kihyun Yoon and Gawon Kim and Woojin Lee and Taigon Song and Junho Lee and Hyungdong Lee and Kunwoo Park and Joungho Kim",

year = "2009",

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language = "English",

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series = "Proceedings of the Electronic Packaging Technology Conference, EPTC",

pages = "702--706",

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Yoon, K, Kim, G, Lee, W, Song, T, Lee, J, Lee, H, Park, K & Kim, J 2009, Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer. in EPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference., 5416458, Proceedings of the Electronic Packaging Technology Conference, EPTC, pp. 702-706, 2009 11th Electronic Packaging Technology Conference, EPTC 2009, Singapore, Singapore, 9/12/09. https://doi.org/10.1109/EPTC.2009.5416458

Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer. / Yoon, Kihyun; Kim, Gawon; Lee, Woojin et al.
EPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference. 2009. p. 702-706 5416458 (Proceedings of the Electronic Packaging Technology Conference, EPTC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yoon, Kihyun

AU - Kim, Gawon

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AU - Song, Taigon

AU - Lee, Junho

AU - Lee, Hyungdong

AU - Park, Kunwoo

AU - Kim, Joungho

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N2 - In this paper, we present a lumped element model for coupled interconnect structures of TSV, metal interconnects, and Redistribution Layer (RDL) in Through-Silicon-Via (TSV)-based 3D IC with silicon interposer. We also analyzed the electrical characteristic of coupling between 3D silicon interposer interconnects. The equivalent lumped model is derived and verified with the S-parameter measurement results. The lumped model for TSV, metal, and RDL combined interconnects is verified with the EM solver simulation results. The S-parameter from the proposed model shows good agreement with the result from the measurement and simulation up to 20GHz. We also proposed shielding structures to suppress coupling between silicon interposer interconnects.

AB - In this paper, we present a lumped element model for coupled interconnect structures of TSV, metal interconnects, and Redistribution Layer (RDL) in Through-Silicon-Via (TSV)-based 3D IC with silicon interposer. We also analyzed the electrical characteristic of coupling between 3D silicon interposer interconnects. The equivalent lumped model is derived and verified with the S-parameter measurement results. The lumped model for TSV, metal, and RDL combined interconnects is verified with the EM solver simulation results. The S-parameter from the proposed model shows good agreement with the result from the measurement and simulation up to 20GHz. We also proposed shielding structures to suppress coupling between silicon interposer interconnects.

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KW - RDL

KW - S-parameter

KW - Shielding structure

KW - Silicon interposer

KW - Through-silicon-via (TSV)

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Yoon K, Kim G, Lee W, Song T, Lee J, Lee H et al. Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer. In EPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference. 2009. p. 702-706. 5416458. (Proceedings of the Electronic Packaging Technology Conference, EPTC). doi: 10.1109/EPTC.2009.5416458

Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer

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