@inproceedings{cb2356a8c4434fc786d1cf5860b3b9a7,
title = "Modeling and RF analysis of silicon inter-band tunnel diode with THz cut-off frequency",
abstract = "We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions.",
author = "{Rok Kim}, Kyung and Kang, {In Man} and Dutton, {Robert W.}",
year = "2010",
doi = "10.1109/SNW.2010.5562553",
language = "English",
isbn = "9781424477272",
series = "2010 Silicon Nanoelectronics Workshop, SNW 2010",
booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",
note = "2010 15th Silicon Nanoelectronics Workshop, SNW 2010 ; Conference date: 13-06-2010 Through 14-06-2010",
}