Abstract
In this study, we propose an eight-channel monolithic optical transmitter using silicon electro-absorption modulators (EAMs) based on free-carrier injection by Schottky junctions. The transmitter consists of a 1 × 8 silicon arrayed-waveguide grating (AWG) and eight 500-×m-long EAMs on a 5.41 × 2.84 mm2 footprint. It generates eight-channel dense wavelength-division multiplexing (DWDM) outputs with 1.33 nm channel spacing (D_) in the C-band from a single broadband light source and modulates each channel with over 3 dB modulation depth at 6 V peak-to-peak. The experimental results showed that the feasibility of a homogeneous silicon DWDM transmitter with a single light source for switch fabrics in intra-data-center interconnects over heterogeneous integration with regards to more complementary metal–oxide–semiconductor (CMOS) compatibility.
Original language | English |
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Article number | 991 |
Journal | Micromachines |
Volume | 11 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2020 |
Keywords
- AWG
- Electro-absorption
- Modulator
- Optoelectronics
- Silicon
- Transmitter
- Waveguide