Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors

Jeonghwan Song; Jaehyuk Park; Kibong Moon; Jiyong Woo; Seokjae Lim; Jongmyung Yoo; Dongwook Lee; Hyunsang Hwang

doi:10.1109/IEDM.2016.7838478

Monolithic integration of AgTe/TiO₂ based threshold switching device with TiN liner for steep slope field-effect transistors

Jeonghwan Song
, Jaehyuk Park
, Kibong Moon
, Jiyong Woo
, Seokjae Lim
, Jongmyung Yoo
, Dongwook Lee
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

31 Scopus citations

Abstract

AgTe/TiN/TiO₂/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO₂ interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (Ion/I_off) of >10⁸ with a low drain voltage (0.5 V) even after the 400°C annealing process.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25.3.1-25.3.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838478
State	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	0
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

Access to Document

10.1109/IEDM.2016.7838478

Cite this

Song, J., Park, J., Moon, K., Woo, J., Lim, S., Yoo, J., Lee, D., & Hwang, H. (2017). Monolithic integration of AgTe/TiO₂ based threshold switching device with TiN liner for steep slope field-effect transistors. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 25.3.1-25.3.4). Article 7838478 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 0). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838478

Song, Jeonghwan ; Park, Jaehyuk ; Moon, Kibong et al. / Monolithic integration of AgTe/TiO₂ based threshold switching device with TiN liner for steep slope field-effect transistors. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 25.3.1-25.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors",

abstract = "AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (Ion/Ioff) of >108 with a low drain voltage (0.5 V) even after the 400°C annealing process.",

author = "Jeonghwan Song and Jaehyuk Park and Kibong Moon and Jiyong Woo and Seokjae Lim and Jongmyung Yoo and Dongwook Lee and Hyunsang Hwang",

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Song, J, Park, J, Moon, K, Woo, J, Lim, S, Yoo, J, Lee, D & Hwang, H 2017, Monolithic integration of AgTe/TiO₂ based threshold switching device with TiN liner for steep slope field-effect transistors. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838478, Technical Digest - International Electron Devices Meeting, IEDM, vol. 0, Institute of Electrical and Electronics Engineers Inc., pp. 25.3.1-25.3.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838478

Monolithic integration of AgTe/TiO₂ based threshold switching device with TiN liner for steep slope field-effect transistors. / Song, Jeonghwan; Park, Jaehyuk; Moon, Kibong et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 25.3.1-25.3.4 7838478 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 0).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors

AU - Song, Jeonghwan

AU - Park, Jaehyuk

AU - Moon, Kibong

AU - Woo, Jiyong

AU - Lim, Seokjae

AU - Yoo, Jongmyung

AU - Lee, Dongwook

AU - Hwang, Hyunsang

PY - 2017/1/31

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N2 - AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (Ion/Ioff) of >108 with a low drain voltage (0.5 V) even after the 400°C annealing process.

AB - AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (Ion/Ioff) of >108 with a low drain voltage (0.5 V) even after the 400°C annealing process.

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Song J, Park J, Moon K, Woo J, Lim S, Yoo J et al. Monolithic integration of AgTe/TiO₂ based threshold switching device with TiN liner for steep slope field-effect transistors. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 25.3.1-25.3.4. 7838478. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838478