Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

Jiyong Woo; Daeseok Lee; Euijun Cha; Sangheon Lee; Sangsu Park; Hyunsang Hwang

doi:10.1063/1.4831680

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, Hyunsang Hwang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (J_MAX > 10⁷ A/cm²) and better off-current (I_OFF < 100 nA) can be achieved.

Original language	English
Article number	202113
Journal	Applied Physics Letters
Volume	103
Issue number	20
DOIs	https://doi.org/10.1063/1.4831680
State	Published - 11 Nov 2013

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title = "Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications",

abstract = "In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (JMAX > 107 A/cm2) and better off-current (IOFF < 100 nA) can be achieved.",

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AU - Woo, Jiyong

AU - Lee, Daeseok

AU - Cha, Euijun

AU - Lee, Sangheon

AU - Park, Sangsu

AU - Hwang, Hyunsang

PY - 2013/11/11

Y1 - 2013/11/11

N2 - In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (JMAX > 107 A/cm2) and better off-current (IOFF < 100 nA) can be achieved.

AB - In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (JMAX > 107 A/cm2) and better off-current (IOFF < 100 nA) can be achieved.

UR - https://www.scopus.com/pages/publications/84889670872

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VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

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