Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (J_MAX > 10⁷ A/cm²) and better off-current (I_OFF < 100 nA) can be achieved.