Multiple-wavelength all-monolithic 1.55-μm vertical-cavity surface-emitting laser arrays

Jae Heon Shin; Byung Soo Yoo; Jong Hee Kim; Won Suk Han; O. Kyun Kwon; Young Gu Ju

doi:10.1143/jjap.42.l304

Multiple-wavelength all-monolithic 1.55-μm vertical-cavity surface-emitting laser arrays

Jae Heon Shin, Byung Soo Yoo, Jong Hee Kim, Won Suk Han, O. Kyun Kwon, Young Gu Ju

Department of Physics Education

Research output: Contribution to journal › Letter › peer-review

2 Scopus citations

Abstract

We demonstrate an electrically pumped all-monolithic 1.55-μm multiple-wavelength vertical-cavity surface-emitting laser array with the channel spacing of 1.2 nm. Binary-coded 3-step selective wet etching of InAlGaAs/InP intra-cavity superlattice is used for the precise wavelength adjustment prior to the growth of top distributed Bragg reflector. All the devices in the array show threshold currents between 2.0 and 2.5 mA under 10-%-duty pulse operation at room temperature.

Original language	English
Pages (from-to)	L304-L306
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.42.l304
State	Published - 15 Mar 2003

Keywords

InAlGaAs
Laser array
Metal-organic chemical vapor deposition (MOCVD)
Monolithic
Vertical-cavity surface-emitting laser (VCSEL)
Wavelength division multiplexing (WDM)

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10.1143/jjap.42.l304

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title = "Multiple-wavelength all-monolithic 1.55-μm vertical-cavity surface-emitting laser arrays",

abstract = "We demonstrate an electrically pumped all-monolithic 1.55-μm multiple-wavelength vertical-cavity surface-emitting laser array with the channel spacing of 1.2 nm. Binary-coded 3-step selective wet etching of InAlGaAs/InP intra-cavity superlattice is used for the precise wavelength adjustment prior to the growth of top distributed Bragg reflector. All the devices in the array show threshold currents between 2.0 and 2.5 mA under 10-%-duty pulse operation at room temperature.",

keywords = "InAlGaAs, Laser array, Metal-organic chemical vapor deposition (MOCVD), Monolithic, Vertical-cavity surface-emitting laser (VCSEL), Wavelength division multiplexing (WDM)",

author = "Shin, {Jae Heon} and Yoo, {Byung Soo} and Kim, {Jong Hee} and Han, {Won Suk} and Kwon, {O. Kyun} and Ju, {Young Gu}",

year = "2003",

month = mar,

day = "15",

doi = "10.1143/jjap.42.l304",

language = "English",

volume = "42",

pages = "L304--L306",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Multiple-wavelength all-monolithic 1.55-μm vertical-cavity surface-emitting laser arrays

AU - Shin, Jae Heon

AU - Yoo, Byung Soo

AU - Kim, Jong Hee

AU - Han, Won Suk

AU - Kwon, O. Kyun

AU - Ju, Young Gu

PY - 2003/3/15

Y1 - 2003/3/15

N2 - We demonstrate an electrically pumped all-monolithic 1.55-μm multiple-wavelength vertical-cavity surface-emitting laser array with the channel spacing of 1.2 nm. Binary-coded 3-step selective wet etching of InAlGaAs/InP intra-cavity superlattice is used for the precise wavelength adjustment prior to the growth of top distributed Bragg reflector. All the devices in the array show threshold currents between 2.0 and 2.5 mA under 10-%-duty pulse operation at room temperature.

AB - We demonstrate an electrically pumped all-monolithic 1.55-μm multiple-wavelength vertical-cavity surface-emitting laser array with the channel spacing of 1.2 nm. Binary-coded 3-step selective wet etching of InAlGaAs/InP intra-cavity superlattice is used for the precise wavelength adjustment prior to the growth of top distributed Bragg reflector. All the devices in the array show threshold currents between 2.0 and 2.5 mA under 10-%-duty pulse operation at room temperature.

KW - InAlGaAs

KW - Laser array

KW - Metal-organic chemical vapor deposition (MOCVD)

KW - Monolithic

KW - Vertical-cavity surface-emitting laser (VCSEL)

KW - Wavelength division multiplexing (WDM)

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U2 - 10.1143/jjap.42.l304

DO - 10.1143/jjap.42.l304

M3 - Letter

AN - SCOPUS:0038699294

SN - 0021-4922

VL - 42

SP - L304-L306

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 B

ER -

Multiple-wavelength all-monolithic 1.55-μm vertical-cavity surface-emitting laser arrays

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