N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

Jaewon Jang; Kyoungah Cho; Junggwon Yun; Sangsig Kim

doi:10.1016/j.mee.2009.01.027

N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

Jaewon Jang, Kyoungah Cho, Junggwon Yun, Sangsig Kim

School of Electronics Engineering

Korea University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al₂O₃ layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm²/Vs and an on/off current ratio of about 10². In addition, the electrical characteristics of the TFT on bent substrates are briefly described.

Original language	English
Pages (from-to)	2030-2033
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	10
DOIs	https://doi.org/10.1016/j.mee.2009.01.027
State	Published - Oct 2009

Keywords

Flexible device
HgSe nanocrystals
Thin-film transistor
UV/ozone treatment

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title = "N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals",

abstract = "We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.",

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author = "Jaewon Jang and Kyoungah Cho and Junggwon Yun and Sangsig Kim",

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AU - Jang, Jaewon

AU - Cho, Kyoungah

AU - Yun, Junggwon

AU - Kim, Sangsig

PY - 2009/10

Y1 - 2009/10

N2 - We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.

AB - We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.

KW - Flexible device

KW - HgSe nanocrystals

KW - Thin-film transistor

KW - UV/ozone treatment

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SN - 0167-9317

VL - 86

SP - 2030

EP - 2033

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 10

ER -

N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

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Keywords

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