N-type chalcogenides by ion implantation

Mark A. Hughes; Yanina Fedorenko; Behrad Gholipour; Jin Yao; Tae Hoon Lee; Russell M. Gwilliam; Kevin P. Homewood; Steven Hinder; Daniel W. Hewak; Stephen R. Elliott; Richard J. Curry

doi:10.1038/ncomms6346

N-type chalcogenides by ion implantation

Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour, Jin Yao, Tae Hoon Lee, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak, Stephen R. Elliott, Richard J. Curry

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Original language	English
Article number	5346
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms6346
State	Published - 2014

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title = "N-type chalcogenides by ion implantation",

abstract = "Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.",

author = "Hughes, {Mark A.} and Yanina Fedorenko and Behrad Gholipour and Jin Yao and Lee, {Tae Hoon} and Gwilliam, {Russell M.} and Homewood, {Kevin P.} and Steven Hinder and Hewak, {Daniel W.} and Elliott, {Stephen R.} and Curry, {Richard J.}",

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doi = "10.1038/ncomms6346",

language = "English",

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journal = "Nature Communications",

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T1 - N-type chalcogenides by ion implantation

AU - Hughes, Mark A.

AU - Fedorenko, Yanina

AU - Gholipour, Behrad

AU - Yao, Jin

AU - Lee, Tae Hoon

AU - Gwilliam, Russell M.

AU - Homewood, Kevin P.

AU - Hinder, Steven

AU - Hewak, Daniel W.

AU - Elliott, Stephen R.

AU - Curry, Richard J.

PY - 2014

Y1 - 2014

N2 - Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

AB - Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

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SN - 2041-1723

VL - 5

JO - Nature Communications

JF - Nature Communications

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ER -

N-type chalcogenides by ion implantation

Abstract

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