Nano-size structure formation on Si substrate for optical device application

Daeyoung Kong; Junghwa Oh; Bonghwan Kim; Chanseob Cho; Jonghyun Lee

doi:10.1109/ICSENS.2012.6411291

Nano-size structure formation on Si substrate for optical device application

Daeyoung Kong
, Junghwa Oh
, Bonghwan Kim
, Chanseob Cho
, Jonghyun Lee

School of Electronics Engineering

Kyungpook National University
Catholic University of Daegu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We have found optimized RIE conditions by increasing the distance between the metal mesh and silicon wafer. We have also found that by increasing the reactive ion etching (RIE) process time with an optimized SF₆/O ₂ ratio, pressure, and RF power. It is possible to switch from a random texture to an nm-size pyramid texture on μm-size pyramid texture. This RIE system textured a crystalline wafer surface that formed approximately 10∼20 nm structures on 2∼3 μm pyramidal silicon with less than 3% of reflectivity.

Original language	English
Title of host publication	IEEE SENSORS 2012 - Proceedings
DOIs	https://doi.org/10.1109/ICSENS.2012.6411291
State	Published - 2012
Event	11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China Duration: 28 Oct 2012 → 31 Oct 2012

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	11th IEEE SENSORS 2012 Conference
Country/Territory	Taiwan, Province of China
City	Taipei
Period	28/10/12 → 31/10/12

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10.1109/ICSENS.2012.6411291

Cite this

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title = "Nano-size structure formation on Si substrate for optical device application",

abstract = "We have found optimized RIE conditions by increasing the distance between the metal mesh and silicon wafer. We have also found that by increasing the reactive ion etching (RIE) process time with an optimized SF6/O 2 ratio, pressure, and RF power. It is possible to switch from a random texture to an nm-size pyramid texture on μm-size pyramid texture. This RIE system textured a crystalline wafer surface that formed approximately 10∼20 nm structures on 2∼3 μm pyramidal silicon with less than 3\% of reflectivity.",

author = "Daeyoung Kong and Junghwa Oh and Bonghwan Kim and Chanseob Cho and Jonghyun Lee",

year = "2012",

doi = "10.1109/ICSENS.2012.6411291",

language = "English",

isbn = "9781457717659",

series = "Proceedings of IEEE Sensors",

booktitle = "IEEE SENSORS 2012 - Proceedings",

note = "11th IEEE SENSORS 2012 Conference ; Conference date: 28-10-2012 Through 31-10-2012",

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TY - GEN

T1 - Nano-size structure formation on Si substrate for optical device application

AU - Kong, Daeyoung

AU - Oh, Junghwa

AU - Kim, Bonghwan

AU - Cho, Chanseob

AU - Lee, Jonghyun

PY - 2012

Y1 - 2012

N2 - We have found optimized RIE conditions by increasing the distance between the metal mesh and silicon wafer. We have also found that by increasing the reactive ion etching (RIE) process time with an optimized SF6/O 2 ratio, pressure, and RF power. It is possible to switch from a random texture to an nm-size pyramid texture on μm-size pyramid texture. This RIE system textured a crystalline wafer surface that formed approximately 10∼20 nm structures on 2∼3 μm pyramidal silicon with less than 3% of reflectivity.

AB - We have found optimized RIE conditions by increasing the distance between the metal mesh and silicon wafer. We have also found that by increasing the reactive ion etching (RIE) process time with an optimized SF6/O 2 ratio, pressure, and RF power. It is possible to switch from a random texture to an nm-size pyramid texture on μm-size pyramid texture. This RIE system textured a crystalline wafer surface that formed approximately 10∼20 nm structures on 2∼3 μm pyramidal silicon with less than 3% of reflectivity.

UR - https://www.scopus.com/pages/publications/84873960428

U2 - 10.1109/ICSENS.2012.6411291

DO - 10.1109/ICSENS.2012.6411291

M3 - Conference contribution

AN - SCOPUS:84873960428

SN - 9781457717659

T3 - Proceedings of IEEE Sensors

BT - IEEE SENSORS 2012 - Proceedings

T2 - 11th IEEE SENSORS 2012 Conference

Y2 - 28 October 2012 through 31 October 2012

ER -

Nano-size structure formation on Si substrate for optical device application

Abstract

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Conference

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