TY - GEN
T1 - Nanometer scale InGaAs HEMT technology for ultra high speed IC
AU - Seo, Kwang K.
AU - Kim, Dae Hyun
PY - 2006
Y1 - 2006
N2 - We have successfully fabricated various nanometer scale InGaAs HEMTs based on novel nano-patteming techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30 nm In0.7Ga 0.3As HEMTs with excellent fT exceeding 400 GHz. Based on nanometer scale InGaAs HEMT technology, several high performance integrated circuits have been successfully fabricated, such as 77 GHz MMIC chipsets for automotive car radar application and 40 Gb/s digital circuits.
AB - We have successfully fabricated various nanometer scale InGaAs HEMTs based on novel nano-patteming techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30 nm In0.7Ga 0.3As HEMTs with excellent fT exceeding 400 GHz. Based on nanometer scale InGaAs HEMT technology, several high performance integrated circuits have been successfully fabricated, such as 77 GHz MMIC chipsets for automotive car radar application and 40 Gb/s digital circuits.
UR - http://www.scopus.com/inward/record.url?scp=33847120746&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33847120746
SN - 0780395581
SN - 9780780395589
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 30
EP - 35
BT - 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
T2 - 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Y2 - 7 May 2006 through 11 May 2006
ER -