Narrow metal-filled trench as a source/drain contact for three-dimensional metal-oxide-semiconductor field effect transistor

We proposed a novel narrow metal-filled trench as a source/drain contact structure for a three-dimensional (3D) metal-oxide-semiconductor field effect transistor (MOSFET) with self-aligned dual metal contacts or dual silicide contacts that can be fabricated by a simple process. We demonstrated experimentally that the proposed structure with a 30 nm narrow trench can be etched and filled. From the simulation, we found that the structure has lower sheet resistance and lower gate-to-source/drain parasitic capacitance than a conventional elevated source/drain contact structure, thereby fulfilling the ITRS requirements. This structure may be an alternative solution for source/drain contacts beyond 32nm technology.