Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Jae Heon Shin; Jong Hee Kim; Hyun Woo Song; Il Young Han; Young Gu Ju; Won Seok Han; O. Kyun Kwon

doi:10.1049/el:20030456

Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Jae Heon Shin, Jong Hee Kim, Hyun Woo Song, Il Young Han, Young Gu Ju, Won Seok Han, O. Kyun Kwon

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.

Original language	English
Pages (from-to)	664-665
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	8
DOIs	https://doi.org/10.1049/el:20030456
State	Published - 17 Apr 2003

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title = "Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs",

abstract = "InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.",

author = "Shin, \{Jae Heon\} and Kim, \{Jong Hee\} and Song, \{Hyun Woo\} and Han, \{Il Young\} and Ju, \{Young Gu\} and Han, \{Won Seok\} and Kwon, \{O. Kyun\}",

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T1 - Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

AU - Shin, Jae Heon

AU - Kim, Jong Hee

AU - Song, Hyun Woo

AU - Han, Il Young

AU - Ju, Young Gu

AU - Han, Won Seok

AU - Kwon, O. Kyun

PY - 2003/4/17

Y1 - 2003/4/17

N2 - InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.

AB - InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.

UR - https://www.scopus.com/pages/publications/0038004121

U2 - 10.1049/el:20030456

DO - 10.1049/el:20030456

M3 - Article

AN - SCOPUS:0038004121

SN - 0013-5194

VL - 39

SP - 664

EP - 665

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Abstract

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