Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Jae Heon Shin; Jong Hee Kim; Hyun Woo Song; Il Young Han; Young Gu Ju; Won Seok Han; O. Kyun Kwon

doi:10.1049/el:20030456

Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Jae Heon Shin
, Jong Hee Kim
, Hyun Woo Song
, Il Young Han
, Young Gu Ju
, Won Seok Han
, O. Kyun Kwon

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.

Original language	English
Pages (from-to)	664-665
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	8
DOIs	https://doi.org/10.1049/el:20030456
State	Published - 17 Apr 2003

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@article{ba298f0a1f71466f8d0712f0f0421336,

title = "Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs",

abstract = "InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.",

author = "Shin, \{Jae Heon\} and Kim, \{Jong Hee\} and Song, \{Hyun Woo\} and Han, \{Il Young\} and Ju, \{Young Gu\} and Han, \{Won Seok\} and Kwon, \{O. Kyun\}",

year = "2003",

month = apr,

day = "17",

doi = "10.1049/el:20030456",

language = "English",

volume = "39",

pages = "664--665",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "8",

}

TY - JOUR

T1 - Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

AU - Shin, Jae Heon

AU - Kim, Jong Hee

AU - Song, Hyun Woo

AU - Han, Il Young

AU - Ju, Young Gu

AU - Han, Won Seok

AU - Kwon, O. Kyun

PY - 2003/4/17

Y1 - 2003/4/17

N2 - InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.

AB - InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ∼2.8 mA.

UR - https://www.scopus.com/pages/publications/0038004121

U2 - 10.1049/el:20030456

DO - 10.1049/el:20030456

M3 - Article

AN - SCOPUS:0038004121

SN - 0013-5194

VL - 39

SP - 664

EP - 665

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Abstract

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