Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics

Sunhae Shin; In Man Kang; Kyung Rok Kim

doi:10.5573/JSTS.2013.13.6.546

Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics

Sunhae Shin, In Man Kang, Kyung Rok Kim

School of Electronics Engineering

Ulsan National Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 10⁴ at low operation voltage of 0.5 V in a single peak and valley current.

Original language	English
Pages (from-to)	546-550
Number of pages	5
Journal	Journal of Semiconductor Technology and Science
Volume	13
Issue number	6
DOIs	https://doi.org/10.5573/JSTS.2013.13.6.546
State	Published - Dec 2013

Keywords

Band-to-band tunneling
Multiple switching
Negative differential resistance
Peak-to-valley current ratio

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10.5573/JSTS.2013.13.6.546

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title = "Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics",

abstract = "We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current.",

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AU - Shin, Sunhae

AU - Kang, In Man

AU - Kim, Kyung Rok

PY - 2013/12

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N2 - We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current.

AB - We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current.

KW - Band-to-band tunneling

KW - Multiple switching

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KW - Peak-to-valley current ratio

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Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics

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Keywords

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