Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Kwangeun Kim; Jaewon Jang; Hyungtak Kim

doi:10.1016/j.rinp.2021.104279

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Kwangeun Kim, Jaewon Jang, Hyungtak Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors.

Original language	English
Article number	104279
Journal	Results in Physics
Volume	25
DOIs	https://doi.org/10.1016/j.rinp.2021.104279
State	Published - Jun 2021

Keywords

GaAs
Nanomembrane transfer
Negative differential resistance
Si
Tunnel junction diode

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10.1016/j.rinp.2021.104279

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title = "Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method",

abstract = "Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors.",

keywords = "GaAs, Nanomembrane transfer, Negative differential resistance, Si, Tunnel junction diode",

author = "Kwangeun Kim and Jaewon Jang and Hyungtak Kim",

note = "Publisher Copyright: {\textcopyright} 2021 The Author(s)",

year = "2021",

month = jun,

doi = "10.1016/j.rinp.2021.104279",

language = "English",

volume = "25",

journal = "Results in Physics",

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TY - JOUR

T1 - Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

AU - Kim, Kwangeun

AU - Jang, Jaewon

AU - Kim, Hyungtak

PY - 2021/6

Y1 - 2021/6

N2 - Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors.

AB - Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors.

KW - GaAs

KW - Nanomembrane transfer

KW - Negative differential resistance

KW - Si

KW - Tunnel junction diode

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DO - 10.1016/j.rinp.2021.104279

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SN - 2211-3797

VL - 25

JO - Results in Physics

JF - Results in Physics

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ER -

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

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Keywords

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