New type of doping effect via metallization of surface reduction in SnO2

Jae Hoon Bang, Myung Sik Choi, Han Gil Na, Wansik Oum, Sun Woo Choi, Sang Sub Kim, Hyoun Woo Kim, Changhyun Jin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The use of conventional doping methods requires consideration of not only the energy connection with the base material but also the limits of the type and doping range of the dopant. The scope of the physico-chemical change must be determined from the properties of the base material, and when this limit is exceeded, a large energy barrier must be formed between the base material and the dopant as in a heterojunction. Thus, starting from a different viewpoint, we introduce a so-called metallization of surface reduction method, which easily overcomes the disadvantages of existing methods while having the effect of doping the base material. Such new synthetic techniques enable sequential energy arrangements–gradients from the surface to the centre of the material–so that free energy transfer effects can be obtained as per the energies in the semiconducting band, eliminating the energy discontinuity of the heterojunction.

Original languageEnglish
Article number8129
JournalScientific Reports
Issue number1
StatePublished - 1 Dec 2019


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